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1. (WO2018087943) MOSFET AND POWER CONVERSION CIRCUIT

Pub. No.:    WO/2018/087943    International Application No.:    PCT/JP2017/011066
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Sat Mar 18 00:59:59 CET 2017
IPC: H01L 29/78
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
新電元工業株式会社
Inventors: ARAI, Daisuke
新井 大輔
KITADA, Mizue
北田 瑞枝
Title: MOSFET AND POWER CONVERSION CIRCUIT
Abstract:
This MOSFET 100 is characterized by being provided with: a semiconductor substrate 110 provided with a super junction structure 117; and a gate electrode 126 formed on a first main surface side of the semiconductor substrate 110 with a gate insulating film 124 therebetween. The MOSFET 100 is further characterized in that, when the depths x of positions at prescribed depths of the super junction structure 117 are plotted on the horizontal axis, and the average positive charge densities ρ(x) in the positions at the prescribed depths of the super junction structure 117 are plotted on the vertical axis, the average positive charge densities ρ(x) in the positions at the prescribed depths of the super junction structure 117 when the MOSFET is turned off and the super junction structure 117 is depleted, are represented by an upwardly convex curve which rises upwards and to the right. According to this MOSFET 100, variation in the switching characteristics when turned off can be reduced in comparison to the prior art, even if there is variation in the charge balance around the gate.