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1. (WO2018087297) SOLDER PADS OF VARIABLE THICKNESS IN AN OPTOELECTRONIC SEMICONDUCTOR CHIP, ON A CONNECTION SUBSTRATE FOR MOUNTING A SEMICONDUCTOR CHIP, METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT HAVING SAID SOLDER PADS
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Pub. No.: WO/2018/087297 International Application No.: PCT/EP2017/078899
Publication Date: 17.05.2018 International Filing Date: 10.11.2017
IPC:
H01L 33/62 (2010.01) ,H01L 33/48 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
LEIRER, Christian; DE
BEHRINGER, Martin Rudolf; DE
Agent:
ZUSAMMENSCHLUSS NR. 175 - EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2016 121 631.311.11.2016DE
Title (EN) SOLDER PADS OF VARIABLE THICKNESS IN AN OPTOELECTRONIC SEMICONDUCTOR CHIP, ON A CONNECTION SUBSTRATE FOR MOUNTING A SEMICONDUCTOR CHIP, METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT HAVING SAID SOLDER PADS
(FR) PASTILLES D'ÉPAISSEUR VARIABLE DANS UNE PUCE SEMI-CONDUCTRICE OPTO-ÉLECTRONIQUE, SUR UN SUPPORT DE CONNEXION POUR LE MONTAGE D'UNE PUCE SEMI-CONDUCTRICE, PROCÉDÉ DE FABRICATION D'UN COMPOSANT OPTO-ÉLECTRONIQUE ET COMPOSANT OPTO-ÉLECTRONIQUE COMPRENANT CES PASTILLES
(DE) LÖTPADS VARIABLER DICKE IN OPTOELEKTRONISCHEM HALBLEITERCHIP, AUF EINEM ANSCHLUSSTRÄGER FÜR DIE MONTAGE EINES HALBLEITERCHIPS, VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN BAUTEILS UND OPTOELEKTRONISCHES BAUTEIL MIT DIESEN LÖTPADS
Abstract:
(EN) An optoelectronic semiconductor chip (1) has a rear side (12) with a centre (12S) and two contact points (13) spaced apart from each other for making electrical contact with the semiconductor chip (1). There are two solder pads (3) on the contact points (13), the centre (12S) lying in the region between the contact points (13), and the solder pads (3) protruding from the rear side (12) and being exposed. The solder pads (3) are on average deliberately thicker away from the centre (12S) than in the vicinity of the centre (12S) or vice versa.
(FR) L'invention concerne une puce semi-conductrice opto-électronique (1) présentant une face arrière (12) pourvue d'un centre (12S) et de deux points de contact (13) espacés l'un de l'autre pour la mise en contact électrique de la puce semi-conductrice (1). Deux pastilles (3) sont placées aux points de contact (13), le centre (12S) étant situé dans la zone comprise entre les points de contact (13) et les pastilles (3) faisant saillie de la face arrière (12) et étant exposées. En moyenne, les pastilles (3) sont sélectionnées pour être plus épaisses de manière ciblée à une plus grande distance du centre (12S) qu'à proximité du centre (12S), ou inversement.
(DE) Ein optoelektronischer Halbleiterchip (1) weist eine Rückseite (12) miteinem Zentrum (12S) und mit zwei voneinander beabstandeten Kontaktstellen (13) zur elektrischen Kontaktierung des Halbleiterchips (1) auf. Auf den Kontaktstellen (13) sind zwei Lötpads (3) angeordnet, wobei das Zentrum (12S) im Bereich zwischen den Kontaktstellen (13) liegt und wobei die Lötpads (3) von der Rückseite (12) hervorstehen und frei liegen. Im Mittel sind die Lötpads (3) weiter weg von dem Zentrum (12S) gezielt dicker gewählt als in der Nähe des Zentrums (12S) oder umgekehrt.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)