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1. (WO2018087110) SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
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Pub. No.: WO/2018/087110 International Application No.: PCT/EP2017/078532
Publication Date: 17.05.2018 International Filing Date: 08.11.2017
IPC:
C30B 25/12 (2006.01) ,C23C 16/27 (2006.01) ,C30B 25/20 (2006.01) ,C30B 29/04 (2006.01)
Applicants: ELEMENT SIX TECHNOLOGIES LIMITED[GB/GB]; Global Innovation Centre Fermi Avenue Harwell Oxford Didcot, Oxfordshire OX11 0QR, GB
Inventors: GREEN, Ben Llewelyn; GB
BENNETT, Andrew Michael; GB
MOLLART, Timothy Peter; GB
OLSSON ROBBIE, Stefan Ian; GB
Agent: MITCHELL, Matthew Benedict David; GB
REEVE, Anna Elizabeth; GB
ROLLINSON, Gabrielle Mary Joy; GB
Priority Data:
1619002.710.11.2016GB
Title (EN) SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
(FR) SYNTHÈSE DE MATÉRIAU MONOCRISTALLIN ÉPAIS DE DIAMANT PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR
Abstract: front page image
(EN) A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.
(FR) L'invention concerne un procédé de fabrication d'une pluralité de diamants monocristallins obtenus par dépôt chimique en phase vapeur (CVD). Le procédé comprend le montage d'une pluralité de substrats de diamant monocristallin sur un premier substrat support. La pluralité de substrats de diamant monocristallin est soumise à un premier procédé de croissance de diamant par CVD pour former une pluralité de diamants monocristallins par CVD sur la pluralité de substrats de diamant monocristallin. La pluralité de diamants monocristallins par CVD sont montés dans un substrat de support en creux et soumis à un deuxième procédé de croissance de diamant par CVD.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)