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1. (WO2018086395) SEMICONDUCTOR MEMORY, SEMICONDUCTOR STORAGE MODULE AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2018/086395    International Application No.:    PCT/CN2017/096756
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Fri Aug 11 01:59:59 CEST 2017
IPC: H01L 23/52
H01L 23/522
H01L 23/528
Applicants: NATIONAL CENTER FOR ADVANCED PACKAGING CO., LTD.
华进半导体封装先导技术研发中心有限公司
Inventors: LU, Yuan
陆原
CHEN, Feng
陈峰
Title: SEMICONDUCTOR MEMORY, SEMICONDUCTOR STORAGE MODULE AND MANUFACTURING METHOD THEREFOR
Abstract:
Provided are a semiconductor memory, a semiconductor storage module and a manufacturing method therefor. The semiconductor storage module comprises at least two storage chip sets (310, 510, 610, 710) sequentially stacked from bottom up; redistribution layers (403, 503, 603, 703) of two adjacent storage chip sets are electrically connected by means of interlayer conductive columns (407, 507, 607), and the redistribution layer (703) of the bottommost storage chip set is electrically connected to an external connection bump (908); each storage chip set comprises at least two storage chips (110, 210) which are sequentially stacked, and a composite insulating layer provided below the at least two storage chips; the at least two storage chips are packaged into an integral structure; the redistribution layer is provided in the composite insulating layer; intra-layer conductive columns (122, 222) of the at least two storage chips are staggered at a preset angle to respectively electrically connected to the redistribution layers. The semiconductor storage module achieves high capacity and integration density of semiconductor memories, and effectively improves the stacking efficiency of memories and reduces the stacking difficulty.