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|1. (WO2018086380) METHOD FOR PREPARING LARGE-SIZED III-V HETEROGENEOUS SUBSTRATE|
|Applicants:||SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
|Title:||METHOD FOR PREPARING LARGE-SIZED III-V HETEROGENEOUS SUBSTRATE|
A method for preparing a large-sized III-V heterogeneous substrate, comprising the following steps: S1: providing a III-V epitaxial structure (1) which comprises an injection surface (31); S2: performing ion implantation on the injection surface, and forming a defect layer (4) at a position of a preset depth on the III-V epitaxial structure; S3: providing a support substrate (5), and bonding the injection surface to the support substrate; and S4: peeling a part of the III-V epitaxial structure along the defect layer, so that a part of the III-V epitaxial structure is transferred to the support substrate to form an III-V film (6) on the support substrate, and the III-V heterogeneous substrate is obtained. The method for preparing a large-sized III-V heterogeneous substrate solves the problems of high process difficulty, low efficiency, and high costs in preparation of large-size III-V heterogeneous substrates.