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1. (WO2018086380) METHOD FOR PREPARING LARGE-SIZED III-V HETEROGENEOUS SUBSTRATE

Pub. No.:    WO/2018/086380    International Application No.:    PCT/CN2017/094041
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Tue Jul 25 01:59:59 CEST 2017
IPC: H01L 21/18
C30B 31/22
C30B 33/02
Applicants: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
中国科学院上海微系统与信息技术研究所
Inventors: OU, Xin
欧欣
GONG, Qian
龚谦
YOU, Tiangui
游天桂
HUANG, Kai
黄凯
LIN, Jiajie
林家杰
ZHANG, Runchun
张润春
Title: METHOD FOR PREPARING LARGE-SIZED III-V HETEROGENEOUS SUBSTRATE
Abstract:
A method for preparing a large-sized III-V heterogeneous substrate, comprising the following steps: S1: providing a III-V epitaxial structure (1) which comprises an injection surface (31); S2: performing ion implantation on the injection surface, and forming a defect layer (4) at a position of a preset depth on the III-V epitaxial structure; S3: providing a support substrate (5), and bonding the injection surface to the support substrate; and S4: peeling a part of the III-V epitaxial structure along the defect layer, so that a part of the III-V epitaxial structure is transferred to the support substrate to form an III-V film (6) on the support substrate, and the III-V heterogeneous substrate is obtained. The method for preparing a large-sized III-V heterogeneous substrate solves the problems of high process difficulty, low efficiency, and high costs in preparation of large-size III-V heterogeneous substrates.