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1. (WO2018085093) PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES

Pub. No.:    WO/2018/085093    International Application No.:    PCT/US2017/058320
Publication Date: Sat May 12 01:59:59 CEST 2018 International Filing Date: Thu Oct 26 01:59:59 CEST 2017
IPC: C23C 16/30
C23C 16/40
C23C 16/50
C23C 16/48
H01L 21/02
Applicants: VERSUM MATERIALS US, LLC
Inventors: XIAO, Manchao
SPENCE, Daniel, P.
HO, Richard
Title: PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES
Abstract:
A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.