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1. (WO2018084186) HARD MASK AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/084186 International Application No.: PCT/JP2017/039569
Publication Date: 11.05.2018 International Filing Date: 01.11.2017
IPC:
H01L 21/3065 (2006.01) ,C23C 14/06 (2006.01) ,C23C 14/34 (2006.01) ,H01L 21/027 (2006.01)
Applicants: TOKYO ELECTRON LIMITED[JP/JP]; 3-1 Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors: TOSHIMA Hiroyuki; JP
FURUKAWA Shinji; JP
Agent: HASEGAWA Yoshiki; JP
KUROKI Yoshiki; JP
KASHIOKA Junji; JP
Priority Data:
2016-21703707.11.2016JP
Title (EN) HARD MASK AND METHOD FOR MANUFACTURING SAME
(FR) MASQUE DUR ET SON PROCÉDÉ DE FABRICATION
(JA) ハードマスク及びハードマスクを製造する方法
Abstract: front page image
(EN) In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and includes tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio stipulating that the concentration of tungsten is 35 at% and the concentration of silicon is 65 at% and a ratio stipulating that the concentration of tungsten is 50 at% and the concentration of silicon is 50 at%.
(FR) Selon un mode de réalisation, la présente invention concerne un masque dur destiné à une gravure au plasma, formé sur un film contenant du silicium. Le masque dur est un film amorphe et comprend du tungstène et du silicium. Le rapport de la concentration de tungstène et de la concentration de silicium dans la surface du masque dur peut être compris dans la plage entre un rapport stipulant une concentration de tungstène de 35 % at et une concentration de silicium de 65 at % et un rapport stipulant une concentration de tungstène de 50 % at et une concentration de silicium de 50 % at.
(JA) 一実施形態のハードマスクは、シリコン含有膜上に形成されるプラズマエッチング用のハードマスクである。このハードマスクは、タングステン及びシリコンを含み、アモルファス膜である。ハードマスクの表面におけるタングステンの濃度とシリコンの濃度の比は、35at.%のタングステン濃度と65at.%のシリコン濃度で規定される比と、50at.%のタングステン濃度と50at.%のシリコン濃度で規定される比との間の範囲内にあり得る。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)