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1. (WO2018084020) SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/084020 International Application No.: PCT/JP2017/038294
Publication Date: 11.05.2018 International Filing Date: 24.10.2017
IPC:
H01L 29/78 (2006.01) ,H01L 21/822 (2006.01) ,H01L 27/04 (2006.01) ,H01L 29/06 (2006.01) ,H01L 29/12 (2006.01) ,H01L 29/47 (2006.01) ,H01L 29/861 (2006.01) ,H01L 29/868 (2006.01) ,H01L 29/872 (2006.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
47
Schottky barrier electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
872
Schottky diodes
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
山城 祐介 YAMASHIRO, Yusuke; JP
須賀原 和之 SUGAHARA, Kazuyuki; JP
渡邊 寛 WATANABE, Hiroshi; JP
海老原 洪平 EBIHARA, Kohei; JP
Agent:
村上 加奈子 MURAKAMI, Kanako; JP
松井 重明 MATSUI, Jumei; JP
倉谷 泰孝 KURATANI, Yasutaka; JP
伊達 研郎 DATE, Kenro; JP
Priority Data:
2016-21406901.11.2016JP
Title (EN) SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
(FR) DISPOSITIF À SEMICONDUCTEUR EN CARBURE DE SILICIUM ET DISPOSITIF DE CONVERSION DE PUISSANCE
(JA) 炭化珪素半導体装置および電力変換装置
Abstract:
(EN) There is a problem that reliability during fast switching decreases when operation of a p-n diode between a well and a drift layer is suppressed in the termination region of a SiC-MOSFET. A circumferential well 31 having an impurity concentration lower than the impurity concentration of an active well region 30 and a high-concentration region 33 having an impurity concentration higher than the impurity concentration of the active well region 30, the high-concentration region 33 being formed on the surface of the circumferential well 31 and being in ohmic contact with a source electrode 80, are provided in the termination region of a MOSFET having a SiC-SBD within.
(FR) Selon la présente invention, il existe un problème selon lequel la fiabilité pendant une commutation rapide diminue lorsque le fonctionnement d'une diode p-n entre un puits et une couche de dérive est supprimé dans la région de terminaison d'un MOSFET SiC. Un puits circonférentiel 31 ayant une concentration en impuretés inférieure à la concentration en impuretés d'une région de puits actif 30 et une région de concentration élevée 33 ayant une concentration en impuretés supérieure à la concentration en impuretés de la région de puits actif 30, la région de haute concentration 33 étant formée sur la surface du puits circonférentiel 31 et étant en contact ohmique avec une électrode de source 80, sont disposées dans la région de terminaison d'un MOSFET ayant un SiC-SBD à l'intérieur.
(JA) SiC-MOSFETの終端領域において、ウェルとドリフト層の間のpnダイオードの動作を抑制すると、高速スイッチング時の信頼性が低下する場合があった。 SiC-SBD内蔵MOSFETの終端領域に、活性領域のウェル領域30の不純物濃度より不純物濃度が低い外周ウェル31と、外周ウェル31の表層に形成された、活性領域のウェル領域30の不純物濃度より不純物濃度が高い、ソース電極80とオーミック接続する高濃度領域33を設ける。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)