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1. (WO2018083951) SPUTTERING TARGET FOR MAGNETIC RECORDING MEDIA
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Pub. No.: WO/2018/083951 International Application No.: PCT/JP2017/036824
Publication Date: 11.05.2018 International Filing Date: 11.10.2017
IPC:
G11B 5/851 (2006.01) ,C22C 5/04 (2006.01) ,C22C 19/07 (2006.01) ,C22C 32/00 (2006.01) ,C23C 14/06 (2006.01) ,C23C 14/34 (2006.01) ,G11B 5/65 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
84
Processes or apparatus specially adapted for manufacturing record carriers
851
Coating a support with a magnetic layer by sputtering
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
5
Alloys based on noble metals
04
Alloys based on a platinum group metal
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
19
Alloys based on nickel or cobalt
07
based on cobalt
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
32
Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
62
Record carriers characterised by the selection of the material
64
comprising only the magnetic material without bonding agent
65
characterised by its composition
Applicants:
田中貴金属工業株式会社 TANAKA KIKINZOKU KOGYO K.K. [JP/JP]; 東京都千代田区丸の内2丁目7-3 東京ビルディング TOKYO BUILDING, 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1006422, JP
国立大学法人東北大学 TOHOKU UNIVERSITY [JP/JP]; 宮城県仙台市青葉区片平二丁目1番1号 2-1-1, Katahira, Aoba-ku, Sendai-shi, Miyagi 9808577, JP
Inventors:
タム キム コング THAM, Kim Kong; JP
櫛引 了輔 KUSHIBIKI, Ryousuke; JP
山本 俊哉 YAMAMOTO, Toshiya; JP
齊藤 伸 SAITO, Shin; JP
日向 慎太朗 HINATA, Shintaro; JP
Agent:
松山 圭佑 MATSUYAMA, Keisuke; JP
高矢 諭 TAKAYA, Satoshi; JP
藤田 崇 FUJITA, Takashi; JP
Priority Data:
2016-21468401.11.2016JP
Title (EN) SPUTTERING TARGET FOR MAGNETIC RECORDING MEDIA
(FR) CIBLE DE PULVÉRISATION POUR SUPPORT D'ENREGISTREMENT MAGNÉTIQUE
(JA) 磁気記録媒体用スパッタリングターゲット
Abstract:
(EN) Provided is a sputtering target for magnetic recording media, which is capable of forming a magnetic thin film that is reduced in size and center-to-center spacing of magnetic crystal grains, while maintaining good magnetic characteristics. A sputtering target for magnetic recording media, which contains Pt metal and an oxide, with the balance being made up of Co metal and unavoidable impurities, and wherein: the Co metal is contained in an amount of from 70 at% to 90 at% (inclusive) relative to the total amount of the metal components of the sputtering target for magnetic recording media; the Pt metal is contained in an amount of from 10 at% to 30 at% (inclusive) relative to the total amount of the metal components of the sputtering target for magnetic recording media; the oxide is contained in an amount of from 26 vol% to 40 vol% (inclusive) relative to the whole of the sputtering target for magnetic recording media; and the oxide is composed of B2O3 and one or more high-melting-point oxides having a melting point of from 1,470°C to 2,800°C (inclusive).
(FR) L'invention concerne une cible de pulvérisation pour support d'enregistrement magnétique, qui est capable de former un film mince magnétique dont la taille et l'espacement entre les centres des grains de cristaux magnétiques sont réduits, tout en conservant de bonnes caractéristiques magnétiques. Une cible de pulvérisation pour support d'enregistrement magnétique, lequel contient du métal Pt et un oxyde, le reste étant constitué de métal Co et d'impuretés inévitables, et : le métal Co étant contenu dans une quantité de 70 % atomique à 90 % atomique (inclus) par rapport à la quantité totale des composants métalliques de la cible de pulvérisation pour support d'enregistrement magnétique ; le métal Pt est contenu dans une quantité de 10 % atomique à 30 % atomique (inclus) par rapport à la quantité totale des composants métalliques de la cible de pulvérisation pour support d'enregistrement magnétique ; l'oxyde est contenu dans une quantité de 26 % en volume à 40 % en volume (inclus) par rapport à l'ensemble de la cible de pulvérisation pour support d'enregistrement magnétique ; et l'oxyde est composé de B 2 O 3 et d'un ou de plusieurs oxydes à point de fusion élevé ayant un point de fusion allant de 1 470 °C à 2 800 °C (inclus).
(JA) 良好な磁気特性を維持しつつ、磁性結晶粒の微細化および磁性結晶粒の中心間距離の低減がなされた磁性薄膜を作製可能な磁気記録媒体用スパッタリングターゲットを提供する。 金属Ptおよび酸化物を含有し、残部が金属Coおよび不可避的不純物からなる磁気記録媒体用スパッタリングターゲットであって、前記磁気記録媒体用スパッタリングターゲットの金属成分の合計に対して、金属Coを70at%以上90at%以下含有し、金属Ptを10at%以上30at%以下含有し、前記磁気記録媒体用スパッタリングターゲットの全体に対して前記酸化物を26vol%以上40vol%以下含有し、さらに、前記酸化物は、B23と、融点が1470℃以上2800℃以下の1種以上の高融点酸化物とからなる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)