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1. (WO2018083837) OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME, SPUTTER TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/083837 International Application No.: PCT/JP2017/023375
Publication Date: 11.05.2018 International Filing Date: 26.06.2017
IPC:
C04B 35/01 (2006.01) ,C23C 14/34 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/363 (2006.01) ,H01L 29/786 (2006.01)
[IPC code unknown for C04B 35/01][IPC code unknown for C23C 14/34][IPC code unknown for H01L 21/336][IPC code unknown for H01L 21/363][IPC code unknown for H01L 29/786]
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
宮永 美紀 MIYANAGA, Miki; JP
綿谷 研一 WATATANI, Kenichi; JP
粟田 英章 AWATA, Hideaki; JP
徳田 一弥 TOKUDA, Kazuya; JP
富永 愛子 TOMINAGA, Aiko; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2016-21626304.11.2016JP
Title (EN) OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME, SPUTTER TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) CORPS FRITTÉ À BASE D'OXYDES ET SON PROCÉDÉ DE PRODUCTION, CIBLE DE PULVÉRISATION, ET PROCÉDÉ DE PRODUCTION D'UN DISPOSITIF SEMI-CONDUCTEUR
(JA) 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
Abstract:
(EN) Provided are: an oxide sintered body comprising an In2O3 crystal phase, a Zn4In2O7 crystal phase, and a ZnWO4 crystal phase, wherein the circularity of crystal grains formed from the ZnWO4 crystal phase is greater than or equal to 0.01 and less than 0.7; a method for producing the oxide sintered body; and a method for producing a semiconductor device comprising an oxide semiconductor film using the oxide sintered body as a sputter target.
(FR) L'invention concerne : un corps fritté à base d'oxydes comprenant une phase cristalline d'In2O3, une phase cristalline de Zn4In2O7 et une phase cristalline de ZnWO4, dans lequel la circularité des grains cristallins formés à partir de la phase cristalline de ZnWO4 est supérieure ou égale à 0,01 et inférieure à 0,7 ; un procédé de production du corps fritté à base d'oxydes ; et un procédé de production d'un dispositif semi-conducteur comprenant un film semi-conducteur à base d'oxydes utilisant le corps fritté à base d'oxydes en tant que cible de pulvérisation.
(JA) In結晶相、ZnIn結晶相およびZnWO結晶相を含み、ZnWO結晶相から構成される結晶粒の真円度が0.01以上0.7未満である酸化物焼結体およびその製造方法、ならびに該酸化物焼結体をスパッタターゲットとして用いた酸化物半導体膜を含む半導体デバイスの製造方法が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)