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1. (WO2018083526) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/083526    International Application No.:    PCT/IB2017/001303
Publication Date: Sat May 12 01:59:59 CEST 2018 International Filing Date: Tue Oct 31 00:59:59 CET 2017
IPC: H01L 29/423
Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA
DENSO CORPORATION
Inventors: ONISHI, Toru
AOI, Sachiko
URAKAMI, Yasushi
Title: SEMICONDUCTOR DEVICE
Abstract:
In an end portion of a trench (6), an opening (22) where the end portion (10) of the trench is exposed is formed in a lead-out electrode (20), a side surface of the trench gate electrode (14) on a top surface side of a semiconductor substrate is spaced from a trench side surface (12), and a range adjacent to a boundary line positioned between a top surface (4) of the semiconductor substrate and the trench side surface is covered with a laminated insulating film configured such that an interlayer insulating film is laminated on a gate insulating film. This makes it possible to prevent dielectric breakdown of an insulating film.