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1. (WO2018083415) METHOD FOR DEPOSITING CHALCOGENIDE THIN FILMS

Pub. No.:    WO/2018/083415    International Application No.:    PCT/FR2017/052998
Publication Date: Sat May 12 01:59:59 CEST 2018 International Filing Date: Wed Nov 01 00:59:59 CET 2017
IPC: C23C 16/30
C23C 16/448
C23C 16/452
C23C 16/455
Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Inventors: GASSILLOUD, Rémy
Title: METHOD FOR DEPOSITING CHALCOGENIDE THIN FILMS
Abstract:
The invention relates to a device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area (4) and a diffusion area (6) receiving the element (P) to be treated, the intake area (4) and the diffusion area (6) extending along a longitudinal axis (Z), a radical hydrogen source (8) connected to the intake area (4), pumping means (19), means for injecting a reagent reacting with the radical hydrogen to form H2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area (4) in the longitudinal direction within the radical hydrogen flow. The pumping means (19) are controlled so as to operate during the reagent injection, and generate a flow of H2S along the element to be treated (P) in order to activate said element so as to absorb the precursor.