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1. (WO2018081410) OPTIMAL WRITE METHOD FOR A FERROELECTRIC MEMORY

Pub. No.:    WO/2018/081410    International Application No.:    PCT/US2017/058509
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Fri Oct 27 01:59:59 CEST 2017
IPC: G11C 11/22
Applicants: AUCMOS TECHNOLOGIES USA, INC.
Inventors: YAN, Tianhong
Title: OPTIMAL WRITE METHOD FOR A FERROELECTRIC MEMORY
Abstract:
A method for programming a memory cell to a predetermined programmed state includes (a) preparing the memory cell for a write operation; (b) sending a train of programming pulses, each programming pulse being a pulse having a magnitude sufficient to program the memory cell to the predetermined programmed state; (c) preparing the memory cell for a read operation; and (d) reading the programmed state of the memory cell to ascertain whether or not the predetermined programmed state is in the memory cell. In one embodiment, the method repeats steps (a)-(d), when the programmed state of the memory cell is not the predetermined programmed state. In one embodiment, the number of times steps (a)-(d) is repeated is determined based on both a probability of successfully writing the memory cell using a single write pulse and a probability of chaotic switching.