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1. (WO2018080783) HYBRID MEMORY MODULE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/080783 International Application No.: PCT/US2017/055908
Publication Date: 03.05.2018 International Filing Date: 10.10.2017
IPC:
G06F 11/10 (2006.01) ,G06F 12/02 (2006.01) ,G11C 7/10 (2006.01) ,G11C 11/4093 (2006.01)
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
11
Error detection; Error correction; Monitoring
07
Responding to the occurrence of a fault, e.g. fault tolerance
08
Error detection or correction by redundancy in data representation, e.g. by using checking codes
10
Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
12
Accessing, addressing or allocating within memory systems or architectures
02
Addressing or allocation; Relocation
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
10
Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
409
Read-write (R-W) circuits
4093
Input/output (I/O) data interface arrangements, e.g. data buffers
Applicants:
RAMBUS INC. [US/US]; 1050 Enterprise Way, Suite 700 Sunnyvale, CA 94089, US
Inventors:
WARE, Frederick, A.; US
LINSTADT, John, Eric; US
WRIGHT, Kenneth, L.; US
Agent:
BAHIEL, Arthur J.; Silicon Edge Law Group LLP 7901 Stoneridge Drive, Suite 528 Pleasanton, CA 94588, US
Priority Data:
62/415,14331.10.2016US
Title (EN) HYBRID MEMORY MODULE
(FR) MODULE DE MÉMOIRE HYBRIDE
Abstract:
(EN) A memory module includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive nonvolatile memory. Local controller manages communication between the DRAM cache and nonvolatile memory to accommodate disparate access granularities, reduce the requisite number of memory transactions, and minimize the flow of data external to nonvolatile memory components.
(FR) Un module de mémoire comprend une mémoire cache de mémoire vive dynamique (DRAM) relativement rapide et durable dans le service d'une plus grande quantité de mémoire non volatile relativement lente et sensible à l'usure. Un contrôleur local gère la communication entre la mémoire cache DRAM et la mémoire non volatile pour s'adapter à des granularités d'accès disparates, réduire le nombre requis de transactions de mémoire, et réduire au minimum le flux de données externe à des composants de mémoire non volatile.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)