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Machine translation
1. (WO2018080711) LOW GAIN LINEARIZATION FOR HIGH SIGNAL-TO-NOISE RATIO
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/080711    International Application No.:    PCT/US2017/053791
Publication Date: 03.05.2018 International Filing Date: 27.09.2017
IPC:
H03F 1/22 (2006.01), H03F 1/32 (2006.01), H03F 1/34 (2006.01), H03F 3/189 (2006.01), H03F 3/193 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 (US)
Inventors: VUJCIC, Sasha; (US).
UZUNKOL, Mehmet; (US).
WANG, Kevin Hsi Huai; (US)
Agent: LENKIN, Alan M.; (US).
LUTZ, Joseph; (US).
PARTOW-NAVID, Puya; (US).
FASHU-KANU, Alvin V.; (US)
Priority Data:
62/413,904 27.10.2016 US
15/447,718 02.03.2017 US
Title (EN) LOW GAIN LINEARIZATION FOR HIGH SIGNAL-TO-NOISE RATIO
(FR) LINÉARISATION À FAIBLE GAIN POUR RAPPORT SIGNAL SUR BRUIT ÉLEVÉ
Abstract: front page image
(EN)A low noise amplifier (LNA) includes a transconductance device coupled to a cascode transistor. The LNA also includes a resistor capacitor (RC) feedback branch. The RC feedback branch includes a first resistor, a capacitor and a first switch. The RC feedback branch is fed back around the transconductance device and is coupled between a drain of either the cascode transistor or the transconductance device and a gate of the transconductance device.
(FR)Un amplificateur à faible bruit (LNA) comprend un dispositif de transconductance couplé à un transistor cascode. Le LNA comprend également une branche de rétroaction de résistance-condensateur (RC). La branche de rétroaction RC comprend une première résistance, un condensateur et un premier commutateur. La branche de rétroaction RC est renvoyée autour du dispositif de transconductance et est couplée entre un drain du transistor cascode ou du dispositif de transconductance et une grille du dispositif de transconductance.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)