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1. (WO2018080300) METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE
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Pub. No.: WO/2018/080300 International Application No.: PCT/MY2017/050066
Publication Date: 03.05.2018 International Filing Date: 27.10.2017
IPC:
H01L 21/02 (2006.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants: UNIVERSITI MALAYA[MY/MY]; Universiti Malaya, 50603 Kuala Lumpur, Wilayah Persekutuan Kuala Lumpur, MY
Inventors: BIN ABU BAKAR, Ahmad Shuhaimi; MY
BIN AZMAN SHAH, Mohd Adreen Shah; MY
AL-ZUHAIRI, Omar Ayad Fadhil; MY
BIN KAMARUNDZAMAN, Anas; MY
Agent: LOK, Choon Hong; MY
Priority Data:
PI 201670399931.10.2016MY
Title (EN) METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE
(FR) PROCÉDÉ DE PRODUCTION DE FILM MINCE DE NITRURE DE GALLIUM (GAN) NON POLAIRE SUR UN SUBSTRAT DE SAPHIR À PLAN R
Abstract:
(EN) A method for producing a non-polar a-plane gallium nitride (GaN) thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique, the method comprising the steps of: annealing the r-plane sapphire substrate using a hydrogen cleaning process; depositing a GaN nucleation layer in the presence of vaporized sources of gallium and nitrogen on the substrate; depositing and growing a GaN buffer layer atop the nucleation layer; and laterally growing a GaN overgrowth layer atop the buffer layer, wherein the step of depositing and growing of the layers are conducted under a standardized volumetric flow rate of the nitrogen source within a range of 0.5 to 2.1 slm. Particularly, the method also comprises controlling V/III ratio, reaction temperature and flow rate of reactants during growth of GaN layers. It was found that such method could result in reduced lattice mismatch between each layer.
(FR) L'invention concerne un procédé de production de film mince de nitrure de gallium (GaN) non polaire sur un substrat de saphir à plan r à l'aide d'une technique de dépôt chimique en phase vapeur organométallique (MOCVD), le procédé comprenant les étapes consistant : à recuire le substrat de saphir à plan r à l'aide d'un procédé de nettoyage à l'hydrogène ; à déposer une couche de nucléation de GaN en présence de sources vaporisées de gallium et d'azote sur le substrat ; à déposer et à faire croître une couche tampon de GaN au-dessus de la couche de nucléation ; et à faire croître de manière latérale une couche de surcroissance de GaN au-dessus de la couche tampon, l'étape de dépôt et de croissance des couches étant réalisée sous un débit volumétrique normalisé de la source d'azote dans une plage de 0,5 à 2,1 slm. En particulier, le procédé comprend également la régulation du rapport V/III, de la température de réaction et du débit de réactifs pendant la croissance de couches de GaN. Il a été découvert qu'un tel procédé pourrait conduire à un défaut d'adaptation de réseau réduit entre chaque couche.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)