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1. (WO2018080004) METHOD OF REPAIRING DAMAGE OF GATE INSULATOR FILM OF FIELD EFFECT TRANSISTOR, USING FORWARD BIAS CURRENT
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Pub. No.: WO/2018/080004 International Application No.: PCT/KR2017/009588
Publication Date: 03.05.2018 International Filing Date: 01.09.2017
IPC:
H01L 29/66 (2006.01) ,H01L 27/02 (2006.01) ,H01L 29/423 (2006.01) ,H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
한국과학기술원 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY [KR/KR]; 대전시 유성구 대학로 291(구성동) (Guseong-dong) 291, Daehak-ro, Yuseong-gu, Daejeon 34141, KR
Inventors:
최양규 CHOI, Yang-Kyu; KR
이건범 LEE, Geon Beom; KR
박준영 PAKR, Jun-Young; KR
배학열 BAE, Hakyoul; KR
김충기 KIM, Choongki; KR
Agent:
김성호 KIM, Sung Ho; KR
Priority Data:
10-2016-012967407.10.2016KR
Title (EN) METHOD OF REPAIRING DAMAGE OF GATE INSULATOR FILM OF FIELD EFFECT TRANSISTOR, USING FORWARD BIAS CURRENT
(FR) PROCÉDÉ DE RÉPARATION D'ENDOMMAGEMENT D'UN FILM ISOLANT DE GRILLE D'UN TRANSISTOR À EFFET DE CHAMP, À L'AIDE D'UN COURANT DE POLARISATION DIRECTE
(KO) 정방향 바이어스 전류를 이용한 전계 효과 트랜지스터의 게이트 절연막 손상을 복구하는 방법
Abstract:
(EN) The present invention provides a method of repairing a damage of a gate insulator film of a field effect transistor, using a forward bias current. In the method of repairing damage of a gate insulator film, a first joule heat generated by a first forward bias current having occurred by applying a first forward bias voltage between a source area and a body of a substrate may be used, or a second joule heat generated by a second forward bias current having occurred by applying a second forward bias voltage between a drain area and the body of the substrate may be used, so as to repair the damage having occurred in the gate insulator film in the field effect transistor which comprises the substrate, the source area and the drain area formed on the substrate, a channel area formed on the substrate to connect the source area and the drain area, the gate insulator film formed on the channel area, and a gate structure formed on the gate insulator film.
(FR) La présente invention concerne un procédé de réparation d'un endommagement d'un film isolant de grille d'un transistor à effet de champ, à l'aide d'un courant de polarisation directe. Dans le procédé de réparation d'un endommagement d'un film isolant de grille, un premier effet joule produit par un premier courant de polarisation directe s'étant produit par application d'une première tension de polarisation directe entre une zone de source et un corps d'un substrat peut être utilisé, ou un seconde effet joule produit par un second courant de polarisation directe s'étant produit par application d'une seconde tension de polarisation directe entre une zone de drain et le corps du substrat peut être utilisée, de manière à réparer les dommages survenus dans le film isolant de grille dans le transistor à effet de champ qui comprend le substrat, la zone de source et la zone de drain formées sur le substrat, une zone de canal formée sur le substrat pour relier la zone de source et la zone de drain, le film isolant de grille formé sur la zone de canal, et une structure de grille formée sur le film isolant de grille.
(KO) 정방향 바이어스 전류를 이용한 전계 효과 트랜지스터의 게이트 절연막 손상을 복구하는 방법이 제공된다. 상기 게이트 절연막 손상을 복구하는 방법은, 기판, 상기 기판 내에 형성된 소스 및 드레인 영역, 상기 기판 내에, 상기 소스 영역과 상기 드레인 영역을 연결하도록 형성된 채널 영역, 상기 채널 영역 상에 형성된 게이트 절연막, 및 상기 게이트 절연막 상에 형성된 게이트 구조체를 포함하는 전계 효과 트랜지스터에 있어서, 상기 소스 영역과 상기 기판의 바디 사이에 제1 정방향 바이어스(forward bias) 전압을 인가하여 발생하는 제1 정방향 바이어스 전류에 의한 제1 줄열(joule heat)을 이용하거나, 상기 드레인 영역과 상기 기판의 바디 사이에 제2 정방향 바이어스 전압을 인가하여 발생하는 제2 정방향 바이어스 전류에 의한 제2 줄열을 이용하여, 상기 게이트 절연막에 발생한 손상을 치유한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)