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1. (WO2018079950) BIDIRECTIONAL TRANSISTOR AND LEAKAGE CURRENT BREAKER USING SAME
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Pub. No.: WO/2018/079950 International Application No.: PCT/KR2017/002703
Publication Date: 03.05.2018 International Filing Date: 13.03.2017
Chapter 2 Demand Filed: 14.08.2017
IPC:
H01L 29/417 (2006.01) ,H01L 29/51 (2006.01) ,G01R 31/02 (2006.01) ,H01M 2/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
51
Insulating materials associated therewith
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31
Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
02
Testing of electric apparatus, lines, or components for short-circuits, discontinuities, leakage, or incorrect line connection
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
2
Constructional details, or processes of manufacture, of the non-active parts
20
Current-conducting connections for cells
34
with provision for preventing undesired use or discharge
Applicants: OH, Teresa[KR/KR]; KR
Inventors: OH, Teresa; KR
Priority Data:
10-2016-014235228.10.2016KR
Title (EN) BIDIRECTIONAL TRANSISTOR AND LEAKAGE CURRENT BREAKER USING SAME
(FR) TRANSISTOR BIDIRECTIONNEL ET DISJONCTEUR DE COURANT DE FUITE L'UTILISANT
(KO) 양방향성 트랜지스터와 이를 이용한 누설전류 차단장치
Abstract:
(EN) The present invention relates to a bidirectional transistor and a leakage current breaker using the same. The bidirectional transistor comprises: a substrate; a gate electrode formed on the substrate; a gate insulating film made of a SiOC thin-film formed on the substrate and the gate electrode; and a source electrode portion and a drain electrode portion which are formed on the gate insulating film so as to be spaced apart from each other, wherein the source electrode portion and the drain electrode portion are configured such that a source representative electrode and a drain representative electrode are disposed on the gate insulating film and on the left and right of the gate electrode, and a plurality of source sub-electrodes and drain sub-electrodes are alternately and repeatedly arranged between the source representative electrode and the drain representative electrode.
(FR) La présente invention concerne un transistor bidirectionnel et un disjoncteur de courant de fuite l'utilisant. Le transistor bidirectionnel comprend : un substrat; une électrode de grille formée sur le substrat; un film d'isolation de grille constitué d'un film mince de SiOC formé sur le substrat et l'électrode de grille; et une partie d'électrode de source et une partie d'électrode de drain qui sont formées sur le film d'isolation de grille de façon à être espacées l'une de l'autre, la partie d'électrode de source et la partie d'électrode de drain étant configurées de telle sorte qu'une électrode représentative de source et une électrode représentative de drain sont disposées sur le film d'isolation de grille et sur la gauche et la droite de l'électrode de grille, et une pluralité de sous-électrodes de source et de sous-électrodes de drain sont disposées en alternance et de façon répétée entre l'électrode représentative de source et l'électrode représentative de drain.
(KO) 본 발명은 양방향성 트랜지스터와 이를 이용한 누설전루 차단장치에 관한 것으로, 양방향 트랜지터는 기판: 상기 기판 위에 형성되는 게이트 전극; 상기 기판과 상기 게이트 전극 위에 형성되는 SiOC 박막으로 이루어진 게이트 절연막; 상기 게이트 절연막 위에 서로 이격하여 형성되는 소스 전극부 및 드레인 전극부를 포함하고, 상기 소스 전극부와 드레인 전극부는, 상기 게이트 절연막 위로 상기 게이트 전극 좌우에 배치되는 소스 대표전극 및 드레인 대표전극과, 상기 소스 대표전극 및 드레인 대표전극 사이에 복수개의 소스 서브전극과 드레인 서브전극을 교대로 반복하여 배열한 것을 특징으로 하는 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)