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1. (WO2018079937) ORGANIC FILM COMPOSITION AND PATTERN FORMATION METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/079937    International Application No.:    PCT/KR2016/015411
Publication Date: 03.05.2018 International Filing Date: 28.12.2016
IPC:
G03F 7/004 (2006.01), G03F 7/11 (2006.01), H01L 21/033 (2006.01), H01L 21/027 (2006.01), G03F 7/031 (2006.01), H01L 21/324 (2006.01), G03F 7/09 (2006.01)
Applicants: SAMSUNG SDI CO., LTD. [KR/KR]; 150-20 Gongse-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17084 (KR)
Inventors: KIM, Heajung; (KR).
NAM, Younhee; (KR).
KANG, Sunhae; (KR).
KIM, Minsoo; (KR).
KIM, Sunghwan; (KR).
KIM, Youngmin; (KR).
KIM, Yoona; (KR).
KIM, Jinhyung; (KR).
BAEK, Jaeyeol; (KR).
YOON, Byeri; (KR).
JEONG, Seulgi; (KR).
CHOI, Yoojeong; (KR).
HWANG, Sunmin; (KR)
Agent: PANKOREA PATENT AND LAW FIRM; 13F, 70 Nonhyeon-ro 85-gil, Gangnam-gu, Seoul 06234 (KR)
Priority Data:
10-2016-0142173 28.10.2016 KR
Title (EN) ORGANIC FILM COMPOSITION AND PATTERN FORMATION METHOD
(FR) COMPOSITION DE FILM ORGANIQUE ET PROCÉDÉ DE FORMATION DE MOTIF
(KO) 유기막 조성물 및 패턴형성방법
Abstract: front page image
(EN)The present invention relates to: an organic film composition containing a polymer comprising a structural unit represented by chemical formula 1, a monomer represented by chemical formula 3, and a solvent; and a pattern formation method using the organic film composition. In chemical formulas 1 and 3, Α, Β, A0, Α1, Α2, L1, L2, L3, L4, X1, X2, X3, X4, m and n mean the same as those described in the specification.
(FR)L'invention concerne : une composition de film organique contenant un polymère comprenant une unité structurelle représentée par la formule chimique 1, un monomère représenté par la formule chimique 3 et un solvant ; et un procédé de formation de motif mettant en oeuvre cette composition de film organique. Dans les formules chimiques 1 et 3, Α, Β, A0, Α1, Α2, L1, L2, L3, L4, X1, X2, X3, X4, m et n sont identiques à ce qui est défini dans la description.
(KO)화학식 1로 표현되는 구조단위를 포함하는 중합체, 화학식 3으로 표현되는 모노머, 그리고 용매를 포함하는 유기막 조성물, 그리고 상기 유기막 조성물을 사용하는 패턴형성방법에 관한 것이다. (1) (3) 상기 화학식 1 및 3에서 Α, Β, A0, Α1, Α2, L1, L2, L3, L4, X1, X2, X3, X4, m 및 n의 정의는 명세서 내에 기재한 바와 같다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)