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1. (WO2018079500) METHOD FOR PRODUCING CRYSTALLINE SILICOTITANATE
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Pub. No.: WO/2018/079500 International Application No.: PCT/JP2017/038229
Publication Date: 03.05.2018 International Filing Date: 24.10.2017
IPC:
C01B 33/32 (2006.01) ,B01J 20/10 (2006.01) ,B01J 20/30 (2006.01) ,C01B 39/00 (2006.01) ,G21F 9/12 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
20
Silicates
32
Alkali metal silicates
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
20
Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
02
comprising inorganic material
10
comprising silica or silicate
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
20
Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
30
Processes for preparing, regenerating or reactivating
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
39
Compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites; Their preparation; After-treatment, e.g. ion-exchange or dealumination
G PHYSICS
21
NUCLEAR PHYSICS; NUCLEAR ENGINEERING
F
PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
9
Treating radioactively contaminated material; Decontamination arrangements therefor
04
Treating liquids
06
Processing
12
by absorption; by adsorption; by ion-exchange
Applicants:
日本化学工業株式会社 NIPPON CHEMICAL INDUSTRIAL CO., LTD. [JP/JP]; 東京都江東区亀戸9丁目11番1号 11-1, Kameido 9-chome, Koto-ku, Tokyo 1368515, JP
Inventors:
宮部 慎介 MIYABE Shinsuke; JP
野口 英治 NOGUCHI Eiji; JP
木ノ瀬 豊 KINOSE Yutaka; JP
Priority Data:
2016-21007826.10.2016JP
Title (EN) METHOD FOR PRODUCING CRYSTALLINE SILICOTITANATE
(FR) PROCÉDÉ DE PRODUCTION DE TITANOSILICATE CRISTALLIN
(JA) 結晶性シリコチタネートの製造方法
Abstract:
(EN) The purpose of the present invention is to produce crystalline silicotitanate having high cesium- and strontium-adsorption performance in sea water in an industrially advantageous manner. A method of the present invention comprises: a first step of mixing a silicic acid source, a sodium compound, a potassium compound, titanium tetrachloride and water together to produce a mixed gel; and a second step of reacting the mixed gel. In the first step, the silicic acid source, the sodium compound, the potassium compound and titanium tetrachloride are added in such a manner that the following formulae can be satisfied: Ti/Si = 1.2 to 1.5 inclusive and M2O/SiO2 = 3.8 to 5.0 inclusive (wherein M represents Na or K). In the second step, the reaction is carried out at 70 to 110ºC under an atmospheric pressure.
(FR) Le but de la présente invention est de produire du titanosilicate cristallin ayant une performance élevée d'adsorption de césium et de strontium dans l'eau de mer d'une manière industriellement avantageuse. Un procédé de la présente invention comprend : une première étape de mélange d'une source d'acide silicique, d'un composé de sodium, d'un composé de potassium, de tétrachlorure de titane et d'eau pour produire un gel mélangé; et une seconde étape consistant à faire réagir le gel mélangé. Dans la première étape, la source d'acide silicique, le composé de sodium, le composé de potassium et le tétrachlorure de titane sont ajoutés de telle sorte que les formules suivantes peuvent être satisfaites: Ti/Si = 1,2 à 1,5 inclus et M2O/SiO2 = 3,8 à 5,0 inclus (où M représente Na ou K). Dans la deuxième étape, la réaction est effectuée à une temperature de 70°C à 110°C sous une pression atmosphérique.
(JA) 海水中においてセシウム及びストロンチウムの吸着性能の高い結晶性シリコチタネートを工業的に有利に製造すること。 ケイ酸源と、ナトリウム化合物と、カリウム化合物と、四塩化チタンと、水 とを混合して混合ゲルを得る第一工程と、得られた混合ゲルを反応させる第二工程とを有する。第一工程において、Ti/Si=1.2以上1.5以下で、且つMO/SiO=3.8以上5.0以下(式中、MはNa及びKを示す。)となるように、ケイ酸源、ナトリウム化合物、カリウム化合物及び四塩化チタンを添加する。第二工程において70~110℃で大気圧下に反応を行う。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)