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1. (WO2018079449) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
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Pub. No.: WO/2018/079449 International Application No.: PCT/JP2017/038053
Publication Date: 03.05.2018 International Filing Date: 20.10.2017
IPC:
G03F 7/038 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01) ,G03F 7/32 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
30
Imagewise removal using liquid means
32
Liquid compositions therefor, e.g. developers
Applicants: FUJIFILM CORPORATION[JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors: SHIRAKAWA Michihiro; JP
KUNITA Kazuto; JP
TAKAHASHI Hidenori; JP
SHIBUYA Akinori; JP
OGAWA Michihiro; JP
HIGASHI Kohei; JP
Agent: NAKASHIMA Junko; JP
YONEKURA Junzo; JP
MURAKAMI Yasunori; JP
Priority Data:
2016-21091327.10.2016JP
2017-04402408.03.2017JP
2017-18447626.09.2017JP
Title (EN) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
(FR) COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTIVE OU SENSIBLE AU RAYONNEMENT, PROCÉDÉ DE FORMATION DE MOTIF, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
Abstract:
(EN) Provided are an actinic ray-sensitive or radiation-sensitive resin composition that has large exposure latitude and can form a pattern of small LWR, a resist film, a pattern forming method, and an electronic device manufacturing method. The actinic ray-sensitive or radiation-sensitive resin composition includes: a compound A that has a plurality of reactive groups X or functional groups A including precursor groups of the reactive groups X; and a compound B that has a plurality of reactive groups Y that react with the reactive groups X or functional groups B including precursor groups of the reactive groups X. The actinic ray-sensitive or radiation-sensitive resin composition further includes a photoacid generator, or at least one of the compound A or the compound B further has a photoacid generation group.
(FR) L’invention fournit une composition de résine sensible à la lumière active ou sensible au rayonnement, un film de réserve, un procédé de formation de motif et un procédé de fabrication de dispositif électronique. Ladite composition de résine sensible à la lumière active ou sensible au rayonnement permet de former un motif de faible LWR, et présente une importante latitude d’exposition. Cette composition de résine sensible à la lumière active ou sensible au rayonnement contient : un composé (A) qui possède une pluralité de groupes fonctionnels (A) incluant un groupe réactif (X) ou un groupe précurseur de celui-ci ; et un composé (B) qui possède une pluralité de groupes fonctionnels (B) incluant un groupe réactif (Y) réagissant avec le groupe réactif (X) ou un groupe précurseur de ce groupe réactif (Y). En outre, soit la composition de résine sensible à la lumière active ou sensible au rayonnement contient un agent générateur de photo-acide, soit le composant (A) et/ou le composant (B) possède un groupe générateur de photo-acide.
(JA) LWRの小さいパターンを形成することができ、かつ、露光ラチチュードが大きい感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法を提供する。感活性光線性又は感放射線性樹脂組成物は、反応性基X又はその前駆体基を含む官能基Aを複数有する化合物Aと、反応性基Xと反応する反応性基Y又はその前駆体基を含む官能基Bを複数有する化合物Bと、を含み、感活性光線性又は感放射線性樹脂組成物が更に光酸発生剤を含むか、又は、化合物A及び化合物Bの少なくとも一方が更に光酸発生基を有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)