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1. (WO2018079362) THERMAL CONDUCTIVE SILICONE COMPOSITION, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/079362 International Application No.: PCT/JP2017/037633
Publication Date: 03.05.2018 International Filing Date: 18.10.2017
IPC:
C08L 83/04 (2006.01) ,C08K 3/08 (2006.01) ,C08K 5/5415 (2006.01) ,C09K 5/14 (2006.01) ,H01L 23/36 (2006.01) ,H01L 23/373 (2006.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04
Polysiloxanes
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
3
Use of inorganic ingredients
02
Elements
08
Metals
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5
Use of organic ingredients
54
Silicon-containing compounds
541
containing oxygen
5415
containing at least one Si-O bond
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
5
Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
08
Materials not undergoing a change of physical state when used
14
Solid materials, e.g. powdery or granular
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
373
Cooling facilitated by selection of materials for the device
Applicants:
信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP/JP]; 東京都千代田区大手町二丁目6番1号 6-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
秋場 翔太 AKIBA Shota; JP
辻 謙一 TSUJI Kenichi; JP
山田 邦弘 YAMADA Kunihiro; JP
Agent:
牛木 護 USHIKI Mamoru; JP
Priority Data:
2016-21363231.10.2016JP
Title (EN) THERMAL CONDUCTIVE SILICONE COMPOSITION, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE SILICONE THERMOCONDUCTRICE, DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 熱伝導性シリコーン組成物、半導体装置及び半導体装置の製造方法
Abstract:
(EN) A thermal conductive silicone composition comprising the following components (A), (B), (C) and (D): (A) an organopolysiloxane represented by average compositional formula (1) R1aSiO(4-a)/2 (wherein R1 represents a hydrogen atom or a monovalent hydrocarbon group; and a represents a numerical value satisfying the equation: 1.8 ≤ a ≤ 2.2) and having a kinematic viscosity of 10 to 100,000 mm2/s at 25ºC; (B) silver nanoparticles having an average particle diameter of 3 to 600 nm; (C) a thermal conductive filler having an average particle diameter of 0.7 to 100 μm and a thermal conductivity of 10 W/mºC or more, which is different from the component (B); and (D) a catalyst selected from the group consisting of a platinum-based catalyst, an organic peroxide and a condensation reaction catalyst.
(FR) L'invention concerne une composition de silicone thermoconductrice comprenant les constituants (A), (B), (C) et (D) suivants : (A) un organopolysiloxane représenté par la formule de composition moyenne (1) R1 aSiO(4-a)/2 (dans laquelle R1 représente un atome d'hydrogène ou un groupe hydrocarboné monovalent ; et a représente une valeur numérique satisfaisant l'équation : 1,8 ≤ a ≤ 2,2) et ayant une viscosité cinématique de 10 à 100 000 mm2/s à 25 °C ; (B) des nanoparticules d'argent ayant un diamètre moyen de particule de 3 à 600 nm ; (C) une charge thermoconductrice ayant un diamètre moyen de particule de 0,7 à 100 µm et une conductivité thermique de 10 W/mºC ou plus, qui est différente du constituant (B) ; et (D) un catalyseur choisi dans le groupe constitué par un catalyseur à base de platine, un peroxyde organique et un catalyseur de réaction de condensation.
(JA) 下記の成分(A)、(B)、(C)及び(D)を含有する熱伝導性シリコーン組成物。 (A)次の平均組成式(1) R1aSiO(4-a)/2 (1) (式(1)中、R1は、水素原子又は一価炭化水素基を示し、aは1.8≦a≦2.2の数である。) で表される、25℃における動粘度が10~100,000mm2/sのオルガノポリシロキサン (B)平均粒径が3~600nmの銀ナノ粒子 (C)平均粒径が0.7~100μmで、10W/m℃以上の熱伝導率を有し、かつ成分(B)以外 の熱伝導性充填材 (D)白金系触媒、有機過酸化物及び縮合反応用触媒からなる群より選択される触媒
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)