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1. (WO2018079296) IMAGING ELEMENT AND ELECTRONIC DEVICE
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Pub. No.: WO/2018/079296 International Application No.: PCT/JP2017/037119
Publication Date: 03.05.2018 International Filing Date: 13.10.2017
IPC:
H01L 27/146 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
横川 創造 YOKOGAWA Sozo; JP
伊藤 幹記 ITO Mikinori; JP
押山 到 OSHIYAMA Itaru; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2016-21029527.10.2016JP
Title (EN) IMAGING ELEMENT AND ELECTRONIC DEVICE
(FR) ÉLÉMENT D'IMAGERIE ET DISPOSITIF ÉLECTRONIQUE
(JA) 撮像素子及び電子機器
Abstract:
(EN) The present technique relates to: a backside-illuminated imaging element which is able to have improved sensitivity with respect to infrared light; and an electronic device. An imaging element according to the present invention is provided with: a semiconductor substrate which is provided with a photoelectric conversion part; a wiring layer which is arranged on a surface of the semiconductor substrate, said surface being on the reverse side of the light-receiving surface, and which comprises a wiring line and a reflective film; and an insulating film which is laminated between the semiconductor substrate and the wiring layer. The reflective film is arranged between the insulating film and the wiring line, and overlaps at least a part of the photoelectric conversion part of each pixel in a first direction that is the lamination direction of the semiconductor substrate and the wiring layer; and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technique is applicable, for example, to a backside-illuminated CMOS image sensor.
(FR) La présente technique concerne : un élément d'imagerie rétroéclairé qui peut avoir une sensibilité améliorée par rapport à la lumière infrarouge; et un dispositif électronique. Un élément d'imagerie selon la présente invention comprend : un substrat semi-conducteur qui comprend une partie de conversion photoélectrique; une couche de câblage qui est disposée sur une surface du substrat semiconducteur, ladite surface étant sur le côté opposé de la surface de réception de lumière, et qui comprend une ligne de câblage et un film réfléchissant; et un film isolant qui est stratifié entre le substrat semiconducteur et la couche de câblage. Le film réfléchissant est disposé entre le film isolant et la ligne de câblage, et chevauche au moins une partie de la partie de conversion photoélectrique de chaque pixel dans une première direction qui est la direction de stratification du substrat semiconducteur et de la couche de câblage; et un premier film intermédiaire entre le film isolant et le film réfléchissant est plus épais que le film isolant. La présente invention est applicable, par exemple, à un capteur d'image CMOS rétroéclairé.
(JA) 本技術は、裏面照射型の撮像素子において、赤外光に対する感度を向上させることができるようにする撮像素子及び電子機器に関する。 撮像素子は、光電変換部が形成されている半導体基板と、前記半導体基板の受光面と反対側に配置され、配線及び反射膜を備える配線層と、前記半導体基板と前記配線層との間に積層されている絶縁膜とを備え、前記反射膜は、前記絶縁膜と前記配線との間に配置され、前記半導体基板と前記配線層とが積層される方向である第1の方向において、各画素の前記光電変換部の少なくとも一部と重なり、前記絶縁膜と前記反射膜との間の第1の層間膜が、前記絶縁膜より厚い。本技術は、例えば、裏面照射型のCMOSイメージセンサに適用できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)