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1. (WO2018078976) SOLID-STATE IMAGE PICKUP ELEMENT, SOLID-STATE IMAGE PICKUP ELEMENT MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
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Pub. No.: WO/2018/078976 International Application No.: PCT/JP2017/026643
Publication Date: 03.05.2018 International Filing Date: 24.07.2017
IPC:
H01L 27/146 (2006.01) ,H01L 21/76 (2006.01) ,H01L 31/10 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ソニー株式会社 SONY CORPORATION [JP/JP]; 東京都港区港南1丁目7番1号 1-7-1 Konan, Minato-ku, Tokyo 1080075, JP
Inventors:
納土 晋一朗 NOUDO Shinichiro; JP
Agent:
松尾憲一郎 MATSUO Kenichiro; JP
Priority Data:
2016-21119528.10.2016JP
Title (EN) SOLID-STATE IMAGE PICKUP ELEMENT, SOLID-STATE IMAGE PICKUP ELEMENT MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
(FR) ÉLÉMENT DE CAPTURE D'IMAGE À SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE CAPTURE D'IMAGE À SEMI-CONDUCTEUR, ET APPAREIL ÉLECTRONIQUE
(JA) 固体撮像素子、固体撮像素子の製造方法、及び電子機器
Abstract:
(EN) The purpose of the present invention is to solve at least one of various problems in a 2PD-type image sensor. Provided is a solid-state image pickup element comprising a plurality of pixels formed on a silicon substrate and each having a photoelectric conversion element. A portion of the pixels are configured so that the photoelectric conversion elements thereof are partitioned by a first-type separation region that extends in a plate-shape in a direction following the thickness direction of the silicon substrate, and another portion of the pixels are configured so that the photoelectric conversion elements thereof are partitioned by a second-type separation region that is formed of a different material than the first-type separation region and that extends in a plate-shape in a direction following the thickness direction of the silicon substrate.
(FR) Le but de la présente invention est de résoudre au moins l'un de divers problèmes dans un capteur d'image de type 2PD. L'invention concerne un élément de capture d'image à semiconducteur comprenant une pluralité de pixels formés sur un substrat de silicium et ayant chacun un élément de conversion photoélectrique. Une partie des pixels est configurée de telle sorte que les éléments de conversion photoélectrique de ceux-ci soient divisés par une région de séparation de premier type qui s'étend sous une forme de plaque dans une direction suivant la direction d'épaisseur du substrat de silicium, et une autre partie des pixels sont configurés de telle sorte que les éléments de conversion photoélectrique de ceux-ci soient divisés par une région de séparation de second type qui est formée d'un matériau différent de la région de séparation de premier type et qui s'étend sous une forme de plaque dans une direction suivant la direction d'épaisseur du substrat de silicium.
(JA) 2PD方式のイメージセンサにおける各種の問題点の少なくとも1つを解決する。 シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子であって、一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、他の一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材料で形成される第2種分離領域によって前記光電変換素子を仕切られている、固体撮像素子。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)