Search International and National Patent Collections

1. (WO2018078962) SEMI-INSULATING CRYSTALS, n-TYPE SEMICONDUCTOR CRYSTALS, AND p-TYPE SEMICONDUCTOR CRYSTALS

Pub. No.:    WO/2018/078962    International Application No.:    PCT/JP2017/025552
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Fri Jul 14 01:59:59 CEST 2017
IPC: C30B 29/38
C23C 16/34
C30B 25/16
H01L 21/205
Applicants: SCIOCS COMPANY LIMITED
株式会社サイオクス
SUMITOMO CHEMICAL COMPANY, LIMITED
住友化学株式会社
Inventors: FUJIKURA Hajime
藤倉 序章
Title: SEMI-INSULATING CRYSTALS, n-TYPE SEMICONDUCTOR CRYSTALS, AND p-TYPE SEMICONDUCTOR CRYSTALS
Abstract:
Provided are semi-insulating crystals represented by the compositional formula InxAlyGa1-x-yN (where 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), wherein: the concentration of each of Si, B, and Fe in the crystals is less than 1 x 1015 at/cm3; and the electrical resistivity under temperature conditions of 20-200°C is 1 x 106Ωcm or higher.