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1. (WO2018078944) METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

Pub. No.:    WO/2018/078944    International Application No.:    PCT/JP2017/021354
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Fri Jun 09 01:59:59 CEST 2017
IPC: C30B 29/36
C23C 16/42
C30B 25/14
H01L 21/205
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: WADA, Keiji
和田 圭司
Title: METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
Abstract:
Provided is a method for manufacturing a silicon carbide epitaxial substrate that comprises: a step in which a plurality of silicon carbide monocrystalline substrates are placed in a substrate holder; and a step in which silicon carbide epitaxial films are formed simultaneously on the plurality of silicon carbide monocrystalline substrates by rotating the substrate holder about an axis orthogonal to the principal planes of the silicon carbide monocrystalline substrates and supplying a carbon-containing gas, a silicon-containing gas, nitrogen gas, and ammonia gas. The flow rate of ammonia gas is no more than 0.0089 times the flow rate of nitrogen gas.