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1. (WO2018078776) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/078776    International Application No.:    PCT/JP2016/081930
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Fri Oct 28 01:59:59 CEST 2016
IPC: H01L 27/04
H01L 29/06
H01L 29/78
Applicants: SANKEN ELECTRIC CO., LTD.
サンケン電気株式会社
Inventors: FUKUNAGA Shunsuke
福永 俊介
KONDO Taro
近藤 太郎
Title: SEMICONDUCTOR DEVICE
Abstract:
This semiconductor device is equipped with: a semiconductor substrate 10 in which a first groove 101 is formed as a mesh structure in plan view, and a second groove 102 is formed in each mesh opening section surrounded by the first groove 101; a first semiconductor element 1 that is formed on the semiconductor substrate 10 and provided with a first gate electrode 81 disposed in the interior of the first groove 101; and second semiconductor elements 2 that are each formed on the semiconductor substrate 10 and provided with a second gate electrode 82 disposed in the interior of the second groove 102 and surrounded by the first gate electrode 81.