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1. (WO2018078775) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/078775    International Application No.:    PCT/JP2016/081929
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Fri Oct 28 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 29/06
Applicants: SANKEN ELECTRIC CO., LTD.
サンケン電気株式会社
Inventors: FUKUNAGA Shunsuke
福永 俊介
KONDO Taro
近藤 太郎
Title: SEMICONDUCTOR DEVICE
Abstract:
This semiconductor device is equipped with a semiconductor substrate, a trench insulating film 50 that is disposed on the inner wall surface of a groove formed in the film thickness direction from the top surface of the semiconductor substrate and has a charged region which is positively charged, and a gate electrode 80 that is disposed above the trench insulating film 50 in the interior of the groove. The positive charge density of the charged region in a side portion of the trench insulating film 50 that is in the outer region touching the semiconductor substrate and is disposed on at least a side surface of the groove is higher than the positive charge density in the inner region of the trench insulating film opposite the outer region.