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Pub. No.:    WO/2018/078686    International Application No.:    PCT/JP2016/081406
Publication Date: 03.05.2018 International Filing Date: 24.10.2016
H01L 23/28 (2006.01), H01L 23/00 (2006.01), H01L 23/12 (2006.01), H03F 3/193 (2006.01)
Applicants: MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP)
Inventors: MATSUI, Toshio; (JP)
Agent: TAKADA, Mamoru; (JP).
Priority Data:
(JA) 高周波増幅器
Abstract: front page image
(EN)A transistor (2) is formed on a surface of a semiconductor substrate (1). First and second wiring lines (10, 11) are formed on the surface of the semiconductor substrate 1 such that the wiring lines sandwich the transistor (2). A plurality of wires (20) are connected to the first and second wiring lines (10, 11) by passing above the transistor (2). A sealing material (21) seals the transistor (2), the first and second wiring lines (10, 11), and the wires (20). The sealing material (21) contains a filler (21a). The distance between the wires (20) is smaller than the grain diameter of the filler (21a). A hollow (22) where the sealing material (21) has not entered between the wires (20) and the transistor (2) is formed.
(FR)L'invention concerne un transistor (2) qui est formé sur une surface d'un substrat semi-conducteur (1). Des première et seconde lignes de câblage (10, 11) sont formées sur la surface du substrat semi-conducteur 1 de telle sorte que les lignes de câblage prennent en sandwich le transistor (2). Une pluralité de fils (20) sont connectés aux première et seconde lignes de câblage (10, 11) en passant au-dessus du transistor (2). Un matériau d'étanchéité (21) scelle le transistor (2), les première et seconde lignes de câblage (10, 11), et les fils (20). Le matériau d'étanchéité (21) contient une charge (21a). La distance entre les fils (20) est inférieure au diamètre de grain de la charge (21a). Un creux (22) où le matériau d'étanchéité (21) n'a pas pénétré entre les fils (20) et le transistor (2) est formé.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)