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1. (WO2018077803) SEMICONDUCTOR BODY
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Pub. No.: WO/2018/077803 International Application No.: PCT/EP2017/077005
Publication Date: 03.05.2018 International Filing Date: 23.10.2017
IPC:
H01L 33/32 (2010.01) ,H01L 31/0352 (2006.01) ,H01L 31/107 (2006.01) ,H01L 33/02 (2010.01) ,H01L 33/04 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
EICHFELDER, Marcus; DE
WALTER, Alexander; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2016 120 419.626.10.2016DE
Title (EN) SEMICONDUCTOR BODY
(FR) ELÉMENT SEMI-CONDUCTEUR
(DE) HALBLEITERKÖRPER
Abstract:
(EN) The invention relates to a semiconductor body (10) having: - an n-doped region (20), - an active region (60), and - a p-doped region (70), wherein - the active region (60) is arranged between the n-doped region (20) and the p-doped region (70), - the n-doped region (20) comprises: - a first layer sequence (30) which has pairs of alternating layers, wherein - a first and a second layer (31, 32) of each pair differ by the doping concentration thereof, - the first and the second layer (31, 32) of each pair have the same material composition apart from the doping thereof, and - a second layer sequence (50) which has pairs of alternating layers, wherein - a first and a second layer (51, 52) of each pair differ by the material composition thereof, and - the second layer sequence (50) is arranged between the first layer sequence (30) and the active region (60).
(FR) L'invention concerne un élément semi-conducteur (10) comprenant : une région dopée n (20), une zone active (60) et une région dopée p (70), la région active (60) étant disposée entre la région dopée n (20) et la région dopée p (70). La zone dopée n (20) comprend : une première succession de couches (30) qui présente des paires de couches alternées, une première et une seconde couche (31, 32) de chaque paire étant différentes en termes de concentration de dopant, la première et la seconde couche (31, 32) de chaque paire présentent la même composition de matière, excepté leur dopage, ainsi qu'une seconde succession de couches (50) qui présente des paires de couches alternées, une première et une seconde couche (51, 32) de chaque paire étant différentes en termes de concentration de dopant, et la seconde succession de couches (50) est disposée entre la première succession de couches (30) et la région active (60).
(DE) Es wird ein Halbleiterkörper (10) angegeben mit: - einem n-dotierten Bereich (20), - einem aktiven Bereich (60), und - einem p-dotierten Bereich (70), wobei - der aktive Bereich (60) zwischen dem n-dotierten (20) und dem p-dotierten Bereich (70) angeordnet ist, - der n-dotierte Bereich (20) umfasst: - eine erste Schichtenfolge (30), welche Paare von alternierenden Schichten aufweist, wobei - sich eine erste und eine zweite Schicht (31, 32) jedes Paars in ihrer Dotierkonzentration unterscheiden, - die erste und die zweite Schicht (31, 32) jedes Paars bis auf ihre Dotierung die gleiche Materialzusammensetzung aufweisen, und - eine zweite Schichtenfolge (50), welche Paare von alternierenden Schichten aufweist, wobei - sich eine erste und eine zweite Schicht (51, 52) jedes Paars in ihrer Materialzusammensetzung unterscheiden, und - die zweite Schichtenfolge (50) zwischen der ersten Schichtenfolge (30) und dem aktiven Bereich (60) angeordnet ist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)