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1. (WO2018077684) PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS

Pub. No.:    WO/2018/077684    International Application No.:    PCT/EP2017/076556
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Thu Oct 19 01:59:59 CEST 2017
IPC: C23C 16/455
C23C 16/40
C23C 16/34
C23C 16/32
Applicants: BASF SE
Inventors: AHLF, Maraike
SCHWEINFURTH, David Dominique
MAYR, Lukas
LESZCZYNSKA, Kinga Izabela
SCHESCHKEWITZ, David
Title: PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS
Abstract:
The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.