Search International and National Patent Collections

1. (WO2018077065) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ARRAY SUBSTRATE AND DISPLAY PANEL

Pub. No.:    WO/2018/077065    International Application No.:    PCT/CN2017/106504
Publication Date: Fri May 04 01:59:59 CEST 2018 International Filing Date: Wed Oct 18 01:59:59 CEST 2017
IPC: H01L 21/34
H01L 29/786
H01L 27/12
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
合肥鑫晟光电科技有限公司
Inventors: ZHOU, Qiang
周强
ZHU, Chaofan
朱超凡
REN, Xingfeng
任兴凤
Title: THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ARRAY SUBSTRATE AND DISPLAY PANEL
Abstract:
Disclosed are a thin film transistor and a manufacturing method therefor, and an array substrate and a display panel. The manufacturing method comprises: successively forming a semiconductor film containing metal elements, an etch-stopper film and source and drain electrode films on a base substrate; and using the same mask plate to form patterns comprising an active layer, an etch-stopper layer, and a source electrode and a drain electrode on the active layer, wherein the etch-stopper layer is configured to electrically connect the source electrode and the drain electrode to the active layer. Since an etch-stopper film is formed on a semiconductor film containing metal elements, in a pattern forming process, the etch-stopper film can protect the semiconductor film containing the metal elements against etching, thereby guaranteeing the performance of a formed active layer.