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1. (WO2018076907) P-I-N STRUCTURE-BASED QLED DEVICE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2018/076907 International Application No.: PCT/CN2017/098254
Publication Date: 03.05.2018 International Filing Date: 21.08.2017
IPC:
H01L 51/50 (2006.01) ,H01L 33/06 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants:
TCL集团股份有限公司 TCL CORPORATION [CN/CN]; 中国广东省惠州市 仲恺高新技术开发区十九号小区 No.19 Community, Zhongkai Hi-Tech Development District Huizhou, Guangdong 516006, CN
Inventors:
钱磊 QIAN, Lei; CN
杨一行 YANG, Yixing; CN
曹蔚然 CAO, Weiran; CN
向超宇 XIANG, Chaoyu; CN
陈崧 CHEN, Song; CN
Agent:
深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN); 中国广东省深圳市 南山区麒麟路1号南山知识服务大楼308-309号 Room 308-309, Knowledge Service Building No.1, Qilin Road, Nanshan District Shenzhen, Guangdong 518052, CN
Priority Data:
201610939765.025.10.2016CN
Title (EN) P-I-N STRUCTURE-BASED QLED DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF QLED À BASE DE STRUCTURE P-I-N ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种基于p-i-n结构的QLED器件及其制备方法
Abstract:
(EN) A p-i-n structure-based QLED device, comprising a substrate (10), a bottom electrode (20), a hole transport layer (30), an electron blocking layer (40), a quantum dot light emitting layer (50), a hole blocking layer (60), an electron transport layer (70), and a top electrode (80). On one hand, a p-type material is used as a hole transport layer and an n-type material is used as an electron transport layer to reduce a driving voltage of the QLED device, thereby effectively reduce the quenching of quantum dot light emitting due to the Stark effect. On the other hand, an intrinsic matrix material (100) is introduced into a quantum dot light emitting layer to reduce the cross relaxation between quantum dots (90) and to increase the probability of radiative recombination; meanwhile, injected electrons and holes can further be effectively trapped to improve the current efficiency, thereby improving the light emitting efficiency of the device and increasing the service life and the stability of the device.
(FR) L'invention concerne un dispositif QLED à base de structure p-i-n, comprenant un substrat (10), une électrode inférieure (20), une couche de transport de trous (30), une couche de blocage d'électrons (40), une couche électroluminescente à points quantiques (50), une couche de blocage de trous (60), une couche de transport d'électrons (70), et une électrode supérieure (80). D'une part, un matériau de type p est utilisé en tant que couche de transport de trous et un matériau de type n est utilisé en tant que couche de transport d'électrons pour réduire une tension d'attaque du dispositif QLED, ce qui permet de réduire efficacement l'atténuation de l'émission de lumière à points quantiques due à l'effet Stark. D'autre part, un matériau de matrice intrinsèque (100) est introduit dans une couche électroluminescente à points quantiques pour réduire la relaxation transversale entre les points quantiques (90) et pour augmenter la probabilité de recombinaison radiative ; pendant ce temps, les électrons et les trous injectés peuvent en outre être efficacement piégés afin d'améliorer l'efficacité du courant, ce qui permet d'améliorer l'efficacité d'émission de lumière du dispositif et d'augmenter la durée de vie et la stabilité du dispositif.
(ZH) 一种基于p-i-n结构的QLED器件,包括衬底(10)、底电极(20)、空穴传输层(30)、电子阻挡层(40)、量子点发光层(50)、空穴阻挡层(60)、电子传输层(70)以及顶电极(80)。其中,一方面通过以p型材料作为空穴传输层以及以n型材料作为电子传输层,来降低QLED器件的驱动电压,从而有效减少斯塔克效应对量子点发光的猝灭;另一方面,通过在量子点发光层中引入本征基质材料(100)来降低量子点(90)之间的交叉弛豫,增强辐射复合几率,同时还可以有效俘获注入的电子和空穴以提高电流效率,从而提高器件的发光效率以及增加器件的使用寿命和稳定性。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)