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1. WO2018075584 - IMAGE SENSOR WITH RESET LOCK

Publication Number WO/2018/075584
Publication Date 26.04.2018
International Application No. PCT/US2017/057094
International Filing Date 18.10.2017
IPC
H04N 5/361 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
357Noise processing, e.g. detecting, correcting, reducing or removing noise
361applied to dark current
CPC
H01L 27/14605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
H01L 27/14612
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
14612involving a transistor
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14623
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14623Optical shielding
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
Applicants
  • INVISAGE TECHNOLOGIES, INC. [US]/[US]
Inventors
  • BOUVIER, Aurel
  • CHOW, Gregory
  • KOLLI, Naveen
  • MANDELLI, Emanuele
Agents
  • KLIGLER, Daniel
Priority Data
62/410,79220.10.2016US
62/410,79320.10.2016US
62/410,79720.10.2016US
62/411,49721.10.2016US
62/411,51721.10.2016US
62/411,51921.10.2016US
62/411,52221.10.2016US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) IMAGE SENSOR WITH RESET LOCK
(FR) CAPTEURS D'IMAGE AVEC VERROUILLAGE DE RÉINITIALISATION
Abstract
(EN) Imaging apparatus (100, 200) includes a photosensitive medium (304) and an array (202) of pixel circuits (302), which are arranged in a matrix of rows and columns on a semiconductor substrate (312), and which are coupled to apply control signals to and to read out photocharge from respective areas of the photosensitive medium, such that the photocharge is read out in a rolling sequence over the rows of the array. The control signals applied in each image frame of the apparatus include a lock signal (RST3), which sets and holds the photosensitive medium at a baseline voltage; a reset signal (RST2), following the lock signal, upon which the photosensitive medium is released from the baseline voltage, thereby initiating integration of the photocharge by the pixel circuit; and a readout signal (RST1), following the reset signal, which switches the photocharge that has been integrated out of the array.
(FR) Un appareil d'imagerie (100, 200) comprend un support photosensible (304) et un réseau (202) de circuits de pixels (302), qui sont agencés dans une matrice de rangées et de colonnes sur un substrat semi-conducteur (312), et qui sont couplés pour appliquer des signaux de commande à une photocharge et pour lire celle-ci à partir de zones respectives du support photosensible, de telle sorte que la photocharge est lue dans une séquence de roulement sur les rangées du réseau. Les signaux de commande appliqués dans chaque trame d'image de l'appareil comprennent un signal de verrouillage (RST3), qui règle et maintient le support photosensible à une tension de base; un signal de réinitialisation (RST2), suivant le signal de verrouillage, sur lequel le support photosensible est libéré de la tension de base, amorçant ainsi l'intégration de la photocharge par le circuit de pixels; et un signal de lecture (RST1), suivant le signal de réinitialisation, qui commute la photocharge précédemment intégrée hors du réseau.
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