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1. WO2018072283 - OLED DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

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Publication Number WO/2018/072283
Publication Date 26.04.2018
International Application No. PCT/CN2016/109572
International Filing Date 13.12.2016
IPC
H01L 27/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 51/56 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 2251/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
30Materials
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
H01L 27/1251
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1251comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
Applicants
  • 武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 金江江 JIN, Jiangjiang
Agents
  • 深圳市德力知识产权代理事务所 COMIPS INTELLECTUAL PROPERTY OFFICE
Priority Data
201610914584.220.10.2016CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) OLED DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF D'AFFICHAGE OLED ET SON PROCÉDÉ DE FABRICATION
(ZH) OLED显示器及其制作方法
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Abstract
(EN) Provided are an organic light-emitting diode (OLED) display device and a method for manufacturing the same. The OLED display device comprises an OLED substrate (101) and a thin-film packaging layer disposed on the OLED substrate (101), wherein the thin-film packaging layer comprises a patterned highly thermal conductive layer (301), and a plurality of openings (3011) having a one-to-one correspondence with a plurality of sub-pixel regions on the OLED substrate (101) are provided on the highly thermal conductive layer (301), which prevents light absorption by the highly thermal conductive layer, and avoids the limitation of a top transmitting device only being capable of using a material provided with high transmittance. As a result, heat generated by the OLED device during operation may be effectively transferred without the light-emitting efficiency of the device being lowered, thereby reducing thermal decomposition of the material of the OLED device, ensuring the device is sufficiently isolated from external moisture and oxygen, and extending the life of the device.
(FR) L'invention concerne un dispositif d'affichage à diodes électroluminescentes organiques (OLED) et son procédé de fabrication. Le dispositif d'affichage à OLED comprend un substrat de DELO (101) et une couche d'encapsulation de film mince disposée sur le substrat de DELO (101), la couche d'encapsulation de film mince comprenant une couche conductrice hautement thermique à motifs (301), et une pluralité d'ouvertures (3011) ayant une correspondance biunivoque avec une pluralité de régions de sous-pixel sur le substrat OLED (101) sont disposées sur la couche conductrice hautement thermique (301), qui empêche l'absorption de lumière par la couche hautement conductrice de chaleur, et évite la limitation d'un dispositif de transmission supérieur uniquement étant capable d'utiliser un matériau doté d'une transmittance élevée. Par conséquent, la chaleur générée par le dispositif OLED pendant le fonctionnement peut être efficacement transférée sans que l'efficacité d'émission de lumière du dispositif ne soit abaissée, ce qui permet de réduire la décomposition thermique du matériau du dispositif OLED, garantissant que le dispositif est suffisamment isolé vis-à-vis de l'humidité externe et de l'oxygène, et prolonge la durée de vie du dispositif.
(ZH) 提供一种OLED显示器及其制作方法。OLED显示器包括OLED基板（101）及设于OLED基板（101）上的薄膜封装层；其中，薄膜封装层包括图案化的高导热层（301），高导热层（301）上设有数个与OLED基板（101）上的数个子像素区域一一对应的开口（3011），不但避免了高导热层对光的吸收，而且避免了顶发射器件仅能够使用具有高透过率材料的限制，从而在不降低器件出光效率的同时，能够有效转移OLED器件在工作时产生的热量，降低OLED器件材料的热分解，并保证器件具有足够的阻隔外界水氧的能力，提高器件寿命。
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