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1. (WO2018067250) THREE-DIMENSIONAL MEMORY DEVICE HAVING DRAIN SELECT LEVEL ISOLATION STRUCTURE AND METHOD OF MAKING THEREOF

Pub. No.:    WO/2018/067250    International Application No.:    PCT/US2017/049445
Publication Date: Fri Apr 13 01:59:59 CEST 2018 International Filing Date: Thu Aug 31 01:59:59 CEST 2017
IPC: H01L 27/1158
H01L 29/788
H01L 29/792
H01L 27/11524
H01L 27/11565
H01L 27/1157
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: ZHANG, Yanli
ALSMEIER, Johann
MAKALA, Raghuveer S.
KANAKAMEDALA, Senaka
SHARANGPANI, Rahul
KAI, James
Title: THREE-DIMENSIONAL MEMORY DEVICE HAVING DRAIN SELECT LEVEL ISOLATION STRUCTURE AND METHOD OF MAKING THEREOF
Abstract:
A layer stack including an alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of memory stack structures, backside trenches are formed through the layer stack. The sacrificial material layers are replaced with electrically conductive layers. Drain select level dielectric isolation structures are formed through drain select level of the stack after formation of the electrically conductive layers. The drain select level dielectric isolation structures laterally separate portions of conductive layers that are employed as drain select level gate electrodes for the memory stack structures.