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|1. (WO2018067250) THREE-DIMENSIONAL MEMORY DEVICE HAVING DRAIN SELECT LEVEL ISOLATION STRUCTURE AND METHOD OF MAKING THEREOF|
|Applicants:||SANDISK TECHNOLOGIES LLC
MAKALA, Raghuveer S.
|Title:||THREE-DIMENSIONAL MEMORY DEVICE HAVING DRAIN SELECT LEVEL ISOLATION STRUCTURE AND METHOD OF MAKING THEREOF|
A layer stack including an alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of memory stack structures, backside trenches are formed through the layer stack. The sacrificial material layers are replaced with electrically conductive layers. Drain select level dielectric isolation structures are formed through drain select level of the stack after formation of the electrically conductive layers. The drain select level dielectric isolation structures laterally separate portions of conductive layers that are employed as drain select level gate electrodes for the memory stack structures.