WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |

Search International and National Patent Collections
World Intellectual Property Organization
Machine translation
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/067136    International Application No.:    PCT/US2016/055449
Publication Date: 12.04.2018 International Filing Date: 05.10.2016
G01N 27/70 (2006.01), H01L 21/70 (2006.01), H01L 27/04 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070 (US)
Inventors: CORRIGAN, George, H., III; (US).
DOMINGUE, Chantelle; (US).
BENGALI, Sadiq; (US)
Agent: HASAN, Nishat; (US).
OAKESON, Gary P.; (US)
Priority Data:
Abstract: front page image
(EN)The present disclosure is drawn to an insulated sensor including a silicon substrate with active circuitry on a surface thereof, an electrode disposed on the silicon substrate, a passivation layer having a thickness from greater than 500 Angstroms to 3,000 Angstroms disposed on the active circuitry, and an electrode insulating layer having a thickness from 10 Angstroms to 500 Angstroms disposed on the electrode.
(FR)L'invention concerne un capteur isolé comprenant: un substrat de silicium dont une surface comporte des circuits actifs; une électrode disposée sur le substrat de silicium; une couche de passivation présentant une épaisseur de plus de 500 angströms à 3000 angströms, disposée sur les circuits actifs; et une couche isolante d'électrode présentant une épaisseur de 10 à 500 angströms, disposée sur l'électrode.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)