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1. (WO2018065852) EPITAXIAL DEPOSITION REACTOR WITH REFLECTOR EXTERNAL TO THE REACTION CHAMBER AND COOLING METHOD OF A SUSCEPTOR AND SUBSTRATES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/065852 International Application No.: PCT/IB2017/055888
Publication Date: 12.04.2018 International Filing Date: 27.09.2017
IPC:
C23C 16/458 (2006.01) ,C23C 16/46 (2006.01) ,H01L 21/324 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
46
characterised by the method used for heating the substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants: LPE S.P.A.[IT/IT]; Via Falzarego 8 20021 Baranzate (MI), IT
Inventors: PRETI, Silvio; IT
OGLIARI, Vincenzo; IT
PRETI, Franco; IT
Agent: Alberto DE ROS; Studio Legale Bird & Bird Via Borgogna, 8 20122 Milano, IT
Priority Data:
10201600009978305.10.2016IT
Title (EN) EPITAXIAL DEPOSITION REACTOR WITH REFLECTOR EXTERNAL TO THE REACTION CHAMBER AND COOLING METHOD OF A SUSCEPTOR AND SUBSTRATES
(FR) RÉACTEUR DE DÉPÔT ÉPITAXIAL AVEC RÉFLECTEUR EXTÉRIEUR À LA CHAMBRE DE RÉACTION ET PROCÉDÉ DE REFROIDISSEMENT D'UN SUSCEPTEUR ET DE SUBSTRATS
Abstract:
(EN) The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates ( 100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates ( 100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).
(FR) La présente invention concerne un réacteur (1) pour le dépôt épitaxial de matériau semi-conducteur sur des substrats (100), comportant: une chambre de réaction (2) dotée d'une cavité (20) formée par une paroi inférieure (21), une paroi supérieure (22) et des parois latérales (23, 24); un suscepteur (3), positionné à l'intérieur de ladite cavité (20), et conçu pour le maintien et le chauffage des substrats (100) pendant le dépôt épitaxial; un système de chauffage (6) conçu pour chauffer ledit suscepteur (3); une plaque supérieure (7) qui est positionnée au-dessus de ladite paroi supérieure (22) et qui recouvre ledit suscepteur (3) de sorte qu'il réfléchit le rayonnement thermique émis par ledit suscepteur (3) vers ledit suscepteur (3). Un flux de liquide (LF) est prévu dans ou sur ladite plaque supérieure (7) pour refroidir ladite plaque supérieure (7). Un flux gazeux (GF) est prévu entre ladite paroi supérieure (22) et ladite plaque supérieure (7) pour favoriser le transfert de chaleur depuis ladite paroi supérieure (22) vers ladite plaque supérieure (7).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: Italian (IT)