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1. (WO2018064983) GAS PHASE ETCHING APPARATUS AND GAS PHASE ETCHING EQUIPMENT

Pub. No.:    WO/2018/064983    International Application No.:    PCT/CN2017/105368
Publication Date: Fri Apr 13 01:59:59 CEST 2018 International Filing Date: Tue Oct 10 01:59:59 CEST 2017
IPC: H01L 21/67
Applicants: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
北京北方华创微电子装备有限公司
Inventors: ZHANG, Jun
张军
MA, Zhenguo
马振国
WU, Xin
吴鑫
WEN, Lihui
文莉辉
HU, Yunlong
胡云龙
ZHANG, Henan
张鹤南
CHU, Fuping
储芾坪
Title: GAS PHASE ETCHING APPARATUS AND GAS PHASE ETCHING EQUIPMENT
Abstract:
A gas phase etching apparatus and equipment. The gas phase etching apparatus comprises a reaction cavity body (201), the space defined thereby forming a reaction cavity (203); a base (209), which is arranged within the reaction cavity and used for supporting a workpiece being processed; an air intake element (202), which is connected to the reaction cavity body and used for introducing an etchant into the interior of the reaction cavity; a pressure control component, which is connected to the reaction cavity body and used for controlling the pressure in the reaction cavity; a first temperature controller (208), which is connected to the reaction cavity body and used for controlling the temperature in the reaction cavity to a first temperature; and a second temperature controller (207), which is connected to the base and used for controlling the temperature of the base to a second temperature. The gas phase etching apparatus and equipment are capable of respectively controlling the temperature of the reaction cavity and that of the base, obviate the need for cooling the workpiece being processed when silicon dioxide is removed before a temperature requirement of a subsequent work process is satisfied, obviate the need for integrating an annealing function in an etching cavity or providing an annealing cavity and a cooling cavity, and are simple in process design, inexpensive, and high in production capacity.