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Machine translation
1. (WO2018064666) ESD PROTECTION CHARGE PUMP ACTIVE CLAMP FOR LOW-LEAKAGE APPLICATIONS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/064666    International Application No.:    PCT/US2017/054754
Publication Date: 05.04.2018 International Filing Date: 02.10.2017
IPC:
H02H 9/04 (2006.01)
Applicants: TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 (US).
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1, Nishi-Shinjuku 6-chome Shinjuku-ku, Tokyo 160-8366 (JP) (JP only)
Inventors: DI SARRO, James, P.; (US).
FARBIZ, Farzan; (US)
Agent: DAVIS, Jr., Michael A.; (US).
CHAN, Daniel, T.; (US)
Priority Data:
15/281,379 30.09.2016 US
Title (EN) ESD PROTECTION CHARGE PUMP ACTIVE CLAMP FOR LOW-LEAKAGE APPLICATIONS
(FR) PINCE ACTIVE DE POMPE DE CHARGE DE PROTECTION CONTRE LES DÉCHARGES ÉLECTROSTATIQUES POUR APPLICATIONS À FAIBLE FUITE
Abstract: front page image
(EN)Described examples include an electrostatic discharge (ESD) protection circuit (100) including a shunt transistor (MN0) coupled between first and second power supply nodes (106, 108), a sensing circuit (105) to deliver a control voltage signal (VG) to turn on the shunt transistor (MN0) in response to a detected change in a voltage (VDD) of the first power supply node (106) resulting from an ESD stress event, and a charge pump circuit (104) to boost the control voltage signal (VG) in response to the control voltage signal (VG) turning the shunt transistor (MN0) on.
(FR)Des exemples selon l'invention comprennent un circuit de protection contre les décharges électrostatiques (100) comprenant un transistor shunt (MN0) couplé entre des premier et second nœuds d'alimentation électrique (106, 108), un circuit de détection (105) destiné à délivrer un signal de tension de commande (VG) pour allumer le transistor shunt (MN0) en réponse à un changement détecté de tension (VDD) du premier nœud d'alimentation électrique (106) résultant d'un événement de contrainte de protection contre les décharges électrostatiques, et un circuit de pompe de charge (104) destiné à amplifier le signal de tension de commande (VG) en réponse au signal de tension de commande (VG) allumant le transistor shunt (MN0).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)