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1. (WO2018063815) DOPED SELECTIVE METAL CAPS TO IMPROVE COPPER ELECTROMIGRATION WITH RUTHENIUM LINER
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Pub. No.: WO/2018/063815 International Application No.: PCT/US2017/051566
Publication Date: 05.04.2018 International Filing Date: 14.09.2017
IPC:
H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
NAIK, Mehul B.; US
WU, Zhiyuan; US
Agent:
PATTERSON, B. Todd; US
TABOADA, Keith; US
Priority Data:
62/403,18602.10.2016US
Title (EN) DOPED SELECTIVE METAL CAPS TO IMPROVE COPPER ELECTROMIGRATION WITH RUTHENIUM LINER
(FR) COIFFES MÉTALLIQUES SÉLECTIVES DOPÉES PERMETTANT D'AMÉLIORER L'ÉLECTROMIGRATION DU CUIVRE AVEC UN REVÊTEMENT EN RUTHÉNIUM
Abstract:
(EN) Embodiments of the present disclosure are related to improved methods for forming a structure in a substrate. In one implementation, the method includes forming a recess in the substrate, forming a barrier layer on exposed surfaces of the substrate and exposed surfaces of the recess, forming an intermediate layer on the barrier layer, forming a metal fill layer on the intermediate layer and overfill the recess, planarizing the metal fill layer to expose the barrier layer, the intermediate layer, and a top surface of the substrate, selectively forming a cobalt layer on the metal fill layer, and exposing the substrate to an aluminum-containing precursor to selectively form a cobalt-aluminum alloy layer on at least a top surface of the cobalt layer.
(FR) Des modes de réalisation de la présente invention concernent des procédés améliorés de formation d'une structure dans un substrat. Dans un mode de réalisation, le procédé consiste à former un évidement dans le substrat, à former une couche barrière sur des surfaces exposées du substrat et des surfaces exposées de l'évidement, à former une couche intermédiaire sur la couche barrière, à former une couche de remplissage métallique sur la couche intermédiaire et à remplir l'évidement, à aplanir la couche de remplissage métallique en vue d'exposer la couche barrière, la couche intermédiaire, et une surface supérieure du substrat, à former sélectivement une couche de cobalt sur la couche de remplissage métallique, et à exposer le substrat à un précurseur comportant de l'aluminium en vue de former sélectivement une couche d'alliage de cobalt-aluminium sur au moins une surface supérieure de la couche de cobalt.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)