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1. (WO2018063814) MEMS RF-SWITCH WITH NEAR-ZERO IMPACT LANDING
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/063814 International Application No.: PCT/US2017/051536
Publication Date: 05.04.2018 International Filing Date: 14.09.2017
IPC:
H01H 59/00 (2006.01) ,H01H 1/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
H
ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
59
Electrostatic relays; Electro-adhesion relays
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
H
ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
1
Contacts
Applicants: CAVENDISH KINETICS, INC[US/US]; 2960 North 1st Street San Jose, California 95134, US
Inventors: KNIPE, Richard L.; US
VAN KAMPEN, Robertus Petrus; US
HUFFMAN, James Douglas; US
BARRON, Lance; US
Agent: VERSTEEG, Steven H.; US
PATTERSON, B. Todd; US
Priority Data:
62/401,23429.09.2016US
Title (EN) MEMS RF-SWITCH WITH NEAR-ZERO IMPACT LANDING
(FR) COMMUTATEUR RF MEMS AVEC ATTERRISSAGE À IMPACT PROCHE DE ZÉRO
Abstract:
(EN) The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.
(FR) La présente invention concerne de manière générale la conception d'un commutateur ohmique MEMS qui permet un atterrissage à faible impact de la plaque mobile de dispositif MEMS sur le contact RF et une force de restauration élevée pour rompre les contacts pour améliorer la durée de vie du commutateur. Le commutateur comprend au moins une électrode de contact disposée au centre du dispositif de commutation et comporte également un montant d'atterrissage secondaire disposé à proximité du centre du dispositif de commutation. Le montant d'atterrissage secondaire s'étend jusqu'à une hauteur supérieure au-dessus du substrat par comparaison au contact RF de l'électrode de contact de telle sorte que la plaque mobile entre en contact avec le montant d'atterrissage secondaire tout d'abord, puis atterrit doucement sur le contact RF. Lors de la libération, la plaque mobile se dégage du contact RF avant le désengagement du montant d'atterrissage secondaire et a une durée de vie plus longue en raison de la force de restauration élevée.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)