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1. (WO2018063378) FILM BULK ACOUSTIC RESONATOR (FBAR) DEVICES FOR HIGH FREQUENCY RF FILTERS

Pub. No.:    WO/2018/063378    International Application No.:    PCT/US2016/054933
Publication Date: Fri Apr 06 01:59:59 CEST 2018 International Filing Date: Sat Oct 01 01:59:59 CEST 2016
IPC: H03H 9/02
H03H 9/25
H03H 9/15
Applicants: INTEL CORPORATION
Inventors: DASGUPTA, Sansaptak
BLOCK, Bruce A.
FISCHER, Paul B.
THEN, Han Wui
RADOSAVLJEVIC, Marko
Title: FILM BULK ACOUSTIC RESONATOR (FBAR) DEVICES FOR HIGH FREQUENCY RF FILTERS
Abstract:
Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.