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1. (WO2018063356) MEMORY DEVICES WITH LOW POWER AND HIGH SCALABILITY

Pub. No.:    WO/2018/063356    International Application No.:    PCT/US2016/054865
Publication Date: Fri Apr 06 01:59:59 CEST 2018 International Filing Date: Sat Oct 01 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 29/792
H01L 29/66
H01L 29/423
Applicants: INTEL CORPORATION
MA, Sean T.
DEWEY, Gilbert
RACHMADY, Willy
KENNEL, Harold
MOHAPATRA, Chandra
METZ, Matthew V.
KAVALIEROS, Jack
MURTHY, Anand
GHANI, Tahir
HUANG, Cheng-Ying
Inventors: MA, Sean T.
DEWEY, Gilbert
RACHMADY, Willy
KENNEL, Harold
MOHAPATRA, Chandra
METZ, Matthew V.
KAVALIEROS, Jack
MURTHY, Anand
GHANI, Tahir
HUANG, Cheng-Ying
Title: MEMORY DEVICES WITH LOW POWER AND HIGH SCALABILITY
Abstract:
A semiconductor layer is deposited on a subfin layer on a substrate. A charge trap layer is deposited on a portion of the semiconductor layer. The semiconductor layer has at least one of a thermal resistivity and a carrier velocity greater than that of silicon.