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1. (WO2018063333) TUNNELING TRANSISTORS INCLUDING SOURCE/DRAIN REGIONS PROCESSED THROUGH CONTACT TRENCHES
Latest bibliographic data on file with the International Bureau    Submit observation
Pub. No.: WO/2018/063333 International Application No.: PCT/US2016/054806
Publication Date: 05.04.2018 International Filing Date: 30.09.2016
IPC:
H01L 29/78 (2006.01) ,H01L 21/768 (2006.01) ,H01L 29/73 (2006.01) ,H01L 21/8238 (2006.01) ,H01L 29/423 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
73
Bipolar junction transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8238
Complementary field-effect transistors, e.g. CMOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
Applicants: INTEL CORPORATION[US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors: GLASS, Glenn A.; US
MURTHY, Anand S.; US
YOUNG, Ian A.; US
AVCI, Uygar E.; US
Agent: BRODSKY, Stephen I.; US
Priority Data:
Title (EN) TUNNELING TRANSISTORS INCLUDING SOURCE/DRAIN REGIONS PROCESSED THROUGH CONTACT TRENCHES
(FR) TRANSISTORS À EFFET TUNNEL COMPRENANT DES RÉGIONS DE SOURCE/DRAIN TRAITÉES PAR L'INTERMÉDIAIRE DE TRANCHÉES DE CONTACT
Abstract:
(EN) Techniques are disclosed for forming tunneling transistors including source and drain (S/D) regions processed through contact trenches. The techniques allow for final S/D material formation to be delayed in the process flow, thereby helping to prevent dopant diffusion from that S/D material into the channel region. In addition, in some cases, material bandgap engineering may be used to enhance the ability of tunneling transistor devices, such as tunnel field-effect transistors (TFETs) and Fermi filter FETs (FFFETs), to resist off-state leakage currents from source to drain (through the channel) and from source to ground/substrate. Such material bandgap engineering can incorporate a material-based band offset component by using different material in the S/D regions to control off-state leakage, to expand upon the limited energy band offset achievable using single-composition material configurations. Increasing the band offset can increase the barrier that carriers must overcome to reach the channel region, thereby reducing off-state leakage.
(FR) L'invention concerne des Techniques de formation de transistors à effet tunnel comprenant des régions de source et de drain (S/D) traitées par l'intermédiaire de tranchées de contact. Les techniques permettent de retarder la formation de matériau S/D final dans le flux de traitement, ce qui aide à empêcher la diffusion de dopant à partir de ce matériau S/D dans la région de canal. De plus, dans certains cas, une ingénierie de bande interdite de matériau peut être utilisée pour améliorer la capacité de dispositifs à transistors à effet tunnel, tels que des transistors à effet de champ tunnel (TFET) et des FETs de filtre de Fermi (FFFETs), pour résister à des courants de fuite à l'état bloqué de la source au drain (à travers le canal) et de la source à la masse/substrat. Une telle ingénierie de bande interdite de matériau peut incorporer un composant de décalage de bande à base de matériau en utilisant différents matériaux dans les régions S/D pour commander une fuite à l'état bloqué, pour s'étendre sur le décalage de bande d'énergie limitée pouvant être obtenu à l'aide de configurations de matériau à composition unique. L'augmentation du décalage de bande peut augmenter la barrière que les porteuses doivent surmonter pour atteindre la région de canal, ce qui permet de réduire les fuites à l'état bloqué.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)