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1. (WO2018063316) DEVICE AND METHOD OF VERY HIGH DENSITY ROUTING USED WITH EMBEDDED MULTI-DIE INTERCONNECT BRIDGE
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Pub. No.: WO/2018/063316 International Application No.: PCT/US2016/054739
Publication Date: 05.04.2018 International Filing Date: 30.09.2016
IPC:
H01L 23/00 (2006.01) ,H01L 23/12 (2006.01) ,H01L 23/538 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
538
the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, CA 95054, US
Inventors:
MAY, Robert Alan; US
JEN, Wei-Lun Kane; US
ROSCH, Jonathan; US
SALAMA, Islam A.; US
DARMAWIKARTA, Kristof; US
Agent:
PERDOK, Monique M.; US
Priority Data:
Title (EN) DEVICE AND METHOD OF VERY HIGH DENSITY ROUTING USED WITH EMBEDDED MULTI-DIE INTERCONNECT BRIDGE
(FR) DISPOSITIF ET PROCÉDÉ DE ROUTAGE À TRÈS HAUTE DENSITÉ UTILISÉ AVEC UN PONT D'INTERCONNEXION MULTI-PUCE INTÉGRÉ
Abstract:
(EN) A device and method for providing enhanced bridge structures is disclosed. A set of conducting and insulating layers are deposited and lithographically processed. The conducting layers have uFLS routing. A bridge with uFLS contacts and die disposed on the underlying structure such that the die are connected with the uFLS contacts and uFLS routing. For core-based structures, the layers are formed after the bridge is placed on the underlying structure and the die connected to the bridge through intervening conductive layers. For coreless structures, the layers are formed over the bridge and carrier, which is removed prior to bonding the die to the bridge, and the die bonded directly to the bridge.
(FR) L'invention concerne un dispositif et un procédé permettant de fournir des structures de pont améliorées. Un ensemble de couches conductrices et isolantes est déposé et traité par lithographie. Les couches conductrices ont un routage uFLS. Un pont avec des contacts uFLS et une puce est disposé sur la structure sous-jacente de telle sorte que la puce est connectée aux contacts uFLS et au routage uFLS. Pour les structures à base de noyau, les couches sont formées après que le pont est placé sur la structure sous-jacente et la puce connectée au pont par l'intermédiaire de couches conductrices intermédiaires. Pour les structures sans noyau, les couches sont formées sur le pont et le support, qui est retiré avant la liaison de la puce au pont, et la puce est liée directement au pont.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)