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1. (WO2018063299) RF FILTERS AND RESONATORS OF CRYSTALLINE III-N FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2018/063299 International Application No.: PCT/US2016/054699
Publication Date: 05.04.2018 International Filing Date: 30.09.2016
IPC:
H03H 3/04 (2006.01) ,H03H 9/58 (2006.01) ,H03H 9/60 (2006.01) ,H03H 9/17 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3
Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007
for the manufacture of electromechanical resonators or networks
02
for the manufacture of piezo-electric or electrostrictive resonators or networks
04
for obtaining desired frequency or temperature coefficient
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46
Filters
54
comprising resonators of piezo-electric or electrostrictive material
58
Multiple crystal filters
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46
Filters
54
comprising resonators of piezo-electric or electrostrictive material
58
Multiple crystal filters
60
Electric coupling means therefor
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15
Constructional features of resonators consisting of piezo-electric or electrostrictive material
17
having a single resonator
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
DASGUPTA, Sansaptak; US
BLOCK, Bruce A.; US
FISCHER, Paul B.; US
THEN, Han Wui; US
RADOSAVLJEVIC, Marko; US
Agent:
SMITH, Paul A.; US
Priority Data:
Title (EN) RF FILTERS AND RESONATORS OF CRYSTALLINE III-N FILMS
(FR) FILTRES RF ET RÉSONATEURS DE FILMS III-N CRISTALLINS
Abstract:
(EN) A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.
(FR) Une architecture de résonateur acoustique de volume est fabriquée par formation épitaxiale d'un film piézoélectrique sur une surface supérieure d'un montant formé à partir d'un substrat sous-jacent. Dans certains cas, le résonateur acoustique est fabriqué pour filtrer de multiples fréquences. Dans certains de ces cas, le dispositif de résonateur comprend deux structures de résonateur différentes sur un seul substrat, chaque structure de résonateur étant configurée pour filtrer une fréquence souhaitée. L'inclusion de deux résonateurs acoustiques différents dans un seul dispositif de résonateur acoustique RF permet à ce dispositif unique de filtrer deux fréquences différentes dans une empreinte relativement petite.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)