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1. (WO2018063224) InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN

Pub. No.:    WO/2018/063224    International Application No.:    PCT/US2016/054368
Publication Date: Fri Apr 06 01:59:59 CEST 2018 International Filing Date: Fri Sep 30 01:59:59 CEST 2016
IPC: H01L 21/02
H01L 29/20
H01L 29/66
Applicants: INTEL CORPORATION
Inventors: RADOSAVLJEVIC, Marko
DASGUPTA, Sansaptak
THEN, Han Wui
Title: InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN
Abstract:
Methods and apparatus for semiconductor manufacture are disclosed. An example apparatus includes a Gallium Nitride (GaN) substrate; a p-type GaN region positioned on the GaN substrate; a p-type Indium Nitride (InN) region positioned on the GaN substrate and sharing an interface with the p-type GaN region; and a n-type Indium Gallium Nitride (InGaN) region positioned on the GaN substrate and sharing an interface with the p-type InN region.