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1. (WO2018062852) SEMICONDUCTOR LIGHT EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/062852    International Application No.:    PCT/KR2017/010728
Publication Date: 05.04.2018 International Filing Date: 27.09.2017
IPC:
H01L 33/38 (2010.01), H01L 33/10 (2010.01), H01L 33/62 (2010.01), H01L 33/02 (2010.01), H01L 33/58 (2010.01), H01L 33/08 (2010.01), H01L 33/60 (2010.01)
Applicants: SEMICON LIGHT CO.,LTD. [KR/KR]; 3F 49, Wongomae-ro 2beon-gil, Giheung-gu Yongin-si Gyeonggi-do 17086 (KR)
Inventors: JIN, Geun Mo; (KR).
LEE, Sung Gi; (KR).
JEONG, Yeon Ho; (KR).
PARK, Jun Chun; (KR).
LEE, Sung Gyu; (KR).
SOUL, Dae Soo; (KR)
Agent: AN, Sang Jeong; (KR)
Priority Data:
10-2016-0124002 27.09.2016 KR
10-2016-0156578 23.11.2016 KR
10-2016-0172794 16.12.2016 KR
10-2016-0176550 22.12.2016 KR
10-2017-0027709 03.03.2017 KR
Title (EN) SEMICONDUCTOR LIGHT EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT SEMI-CONDUCTEUR
(KO) 반도체 발광소자
Abstract: front page image
(EN)The present disclosure relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through hole-electron recombination; a reflective film formed on the plurality of semiconductor layers so as to reflect the light generated in the active layer toward the first semiconductor layer; a first electrode part electrically connected to the first semiconductor layer and supplying one of an electron and a hole; a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole; and an electrode display part interposed between the plurality of semiconductor layers and the reflective film.
(FR)La présente invention concerne un dispositif électroluminescent à semi-conducteur comprenant : une pluralité de couches semi-conductrices comprenant une première couche semi-conductrice ayant une première conductivité, une seconde couche semi-conductrice ayant une seconde conductivité différente de la première conductivité, et une couche active interposée entre la première couche semi-conductrice et la seconde couche semi-conductrice et générant de la lumière par recombinaison électron-trou; un film réfléchissant formé sur la pluralité de couches semi-conductrices de manière à réfléchir la lumière générée dans la couche active vers la première couche semi-conductrice; une première partie d'électrode connectée électriquement à la première couche semi-conductrice et fournissant l'un d'un électron et d'un trou; une seconde partie d'électrode connectée électriquement à la seconde couche semi-conductrice et fournissant l'un restant parmi l'électron et le trou; et une partie d'affichage d'électrode interposée entre la pluralité de couches semi-conductrices et le film réfléchissant.
(KO)본 개시는 반도체 발광소자에 있어서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층 및 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 활성층에서 생성된 빛을 제1 반도체층 측으로 반사하도록 복수의 반도체층 위에 형성된 반사막; 제1 반도체층과 전기적으로 연결되며 전자와 정공 중 하나를 공급하는 제1 전극부; 제2 반도체층과 전기적으로 연결되며 전자와 정공 중 나머지 하나를 공급하는 제2 전극부; 그리고 복수의 반도체층과 반사막 사이에 개재되는 전극 표시부를 포함하는 반도체 발광소자에 관한 것이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)