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1. (WO2018061445) SUBSTRATE PROCESSING DEVICE
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Pub. No.: WO/2018/061445 International Application No.: PCT/JP2017/027228
Publication Date: 05.04.2018 International Filing Date: 27.07.2017
IPC:
H01L 21/306 (2006.01) ,H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1ー1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
樋口 鮎美 HIGUCHI Ayumi; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
有田 貴弘 ARITA Takahiro; JP
Priority Data:
2016-19324930.09.2016JP
Title (EN) SUBSTRATE PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置
Abstract:
(EN) The purpose of the present invention is to enable quick recovery of metal ion removal performance in a substrate processing device. In order to achieve the purpose, the substrate processing device 1 is provided with a processing unit 11, a supply tank 12, and a recovery tank 13. In the processing unit 11, an etching process is performed on a substrate 9 using a processing liquid 91 from a first circulation path 211. The processing liquid 91 after use is guided to the recovery tank 13 and circulated through a second circulation path 223. The second circulation path 223 comprises first partial piping 223a and second partial piping 223b, the first partial piping 223a having an inner wall provided with a metal removal coating 233 including a metal capturing base that removes metal ions in the processing liquid. The first partial piping 223a is supplied with an acid-based chemical solution 92 from an acid-based chemical solution supply unit 24 so as to regenerate the metal adsorption power of the metal capturing base.
(FR) La présente invention a pour objet de permettre une récupération rapide des performances d'élimination d'ions métalliques dans un dispositif de traitement de substrat. L'invention réalise à cet effet un dispositif de traitement de substrat (1) qui est pourvu d'une unité de traitement (11), d'un réservoir d'alimentation (12) et d'un réservoir de récupération (13). Un processus de gravure est effectué sur un substrat (9), dans l'unité de traitement (11), en utilisant un liquide de traitement (91) provenant d'un premier trajet de circulation (211). Après utilisation, le liquide de traitement (91) est acheminé vers le réservoir de récupération (13) et mis en circulation à travers un deuxième trajet de circulation (223). Le deuxième trajet de circulation (223) comprend une première tuyauterie partielle (223a) et une deuxième tuyauterie partielle (223b), la première tuyauterie partielle (223a) ayant une paroi intérieure pourvue d'un revêtement d'élimination de métal (233) qui contient une base de capture de métal qui élimine les ions métalliques dans le liquide de traitement. La première tuyauterie partielle (223a) est alimentée par une solution chimique à base d'acide (92) provenant d'une unité d'alimentation (24) en solution chimique à base d'acide de façon à régénérer la capacité d'adsorption de métal de la base de capture de métal.
(JA) 基板処理装置における金属イオンの除去性能を迅速に回復させることを目的とする。当該目的を達成するために、基板処理装置1は、処理部11と、供給タンク12と、回収タンク13とを備える。処理部11では、第1循環路211からの処理液91により、基板9にエッチング処理が行われる。使用済みの処理液91は回収タンク13に導かれ、第2循環路223を循環する。第2循環路223は、第1部分配管223aと第2部分配管223bとからなり、第1部分配管223aの内壁には処理液中の金属イオンを除去するメタル捕捉基を含むメタル除去コーティング233が施されている。第1部分配管223aには酸系薬液供給部24から酸系薬液92が供給されてメタル捕捉基のメタル吸着力が再生される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)